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2SC4617T1G
2SC4617T1G
598-2SC4617T1G
SC-75, SOT-416
2SC4617T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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2SC4617T1G Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.As a result, it can handle voltages as low as 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2SC4617T1G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 180MHz
2SC4617T1G Applications
There are a lot of ON Semiconductor 2SC4617T1G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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2SC4617T1G
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