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2SA2127-AE
2SA2127-AE
598-2SA2127-AE
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2SA2127-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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2SA2127-AE Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 420MHz.A breakdown input voltage of 50V volts can be used.Maximum collector currents can be below 2A volts.
2SA2127-AE Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 420MHz
2SA2127-AE Applications
There are a lot of ON Semiconductor 2SA2127-AE applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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2SA2127-AE
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