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  • 2N5089RLRA

2N5089RLRA

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Manufacturer No:

2N5089RLRA

Manufacturer:

ON Semiconductor

HK JDW NO:

598-2N5089RLRA

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

2N5089RLRA

Description:

2N5089RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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2N5089RLRA Overview


This device has a DC current gain of 400 @ 100μA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.Keeping the emitter base voltage at 3V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.The part has a transition frequency of 50MHz.Maximum collector currents can be below 50mA volts.

2N5089RLRA Features


the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz

2N5089RLRA Applications


There are a lot of ON Semiconductor 2N5089RLRA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N5089RLRA

technical specifications, attributes, parameters and parts with similar specifications to 2N5089RLRA.

  • Type
    Parameter
    Select All
  • Max Power Dissipation

    625mW

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    240

  • Reach Compliance Code

    not_compliant

  • Current Rating

    50mA

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    2N5089

  • Pin Count

    3

  • JESD-30 Code

    O-PBCY-T3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    50MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    500mV

  • Max Collector Current

    50mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    400 @ 100μA 5V

  • Current - Collector Cutoff (Max)

    50nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 1mA, 10mA

  • Collector Emitter Breakdown Voltage

    25V

  • Transition Frequency

    50MHz

  • Collector Emitter Saturation Voltage

    500mV

  • Collector Base Voltage (VCBO)

    30V

  • Emitter Base Voltage (VEBO)

    3V

  • hFE Min

    400

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • JESD-609 Code

    e0

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Additional Feature

    LOW NOISE

  • HTS Code

    8541.21.00.95

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    25V

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