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2N3906TAR
2N3906TAR
598-2N3906TAR
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N3906TAR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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2N3906TAR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TAR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TAR Applications
There are a lot of ON Semiconductor 2N3906TAR applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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2N3906TAR
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