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2DB1188P-13
2DB1188P-13
233-2DB1188P-13
TO-243AA
2DB1188P-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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2DB1188P-13 Overview
In this device, the DC current gain is 82 @ 500mA 3V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 120MHz.An input voltage of 32V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2DB1188P-13 Features
the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2DB1188P-13 Applications
There are a lot of Diodes Incorporated 2DB1188P-13 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
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2DB1188P-13
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