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Home Home Discrete Semiconductors Single BJT Transistors 2DB1132R-13
2DB1132R-13
  • 2DB1132R-13
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2DB1132R-13

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Manufacturer No:

2DB1132R-13

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-2DB1132R-13

Package:

TO-243AA

Datasheet:

2DB1132R-13

Description:

2DB1132R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

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In Stock : 999

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2DB1132R-13 Overview


In this device, the DC current gain is 180 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -125mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 190MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.In extreme cases, the collector current can be as low as 1A volts.

2DB1132R-13 Features


the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz

2DB1132R-13 Applications


There are a lot of Diodes Incorporated 2DB1132R-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
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Step5Bar-code shipping tag

2DB1132R-13

technical specifications, attributes, parameters and parts with similar specifications to 2DB1132R-13.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    15 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-243AA

  • Number of Pins

    4

  • Weight

    51.993025mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2011

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    1W

  • Terminal Form

    FLAT

  • Peak Reflow Temperature (Cel)

    260

  • Frequency

    190MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    2DB1132

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-F3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1W

  • Case Connection

    COLLECTOR

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    190MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    32V

  • Max Collector Current

    1A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    180 @ 100mA 3V

  • Current - Collector Cutoff (Max)

    500nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    32V

  • Transition Frequency

    190MHz

  • Collector Emitter Saturation Voltage

    -125mV

  • Max Breakdown Voltage

    32V

  • Collector Base Voltage (VCBO)

    40V

  • Emitter Base Voltage (VEBO)

    5V

  • Height

    1.5mm

  • Length

    4.5mm

  • Width

    2.48mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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