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NGTB25N120FL2WG
NGTB25N120FL2WG
598-NGTB25N120FL2WG
TO-247-3
NGTB25N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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NGTB25N120FL2WG Description
The Field Stop II Trench architecture of this Insulated Gate Bipolar Transistor (IGBT) ensures exceptional performance in demanding switching applications, with low on-state voltage and little switching loss. The IGBT is ideal for solar and UPS applications. A soft and quick copackaged free wheeling diode with a low forward voltage is included in the device.
NGTB25N120FL2WG Features
? Field Stop Technology for Extremely Efficient Trenching
? Maximum TJ = 175°C
? Diode with a Soft Fast Reverse Recovery
? High-speed switching optimized
? Short-circuit capability of 10 seconds
? These devices are free of lead.
NGTB25N120FL2WG Applications
? Inverter solar
? UPS (Uninterruptible Power Supply) (UPS)
? Tack welding
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NGTB25N120FL2WG
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