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FQA9N90C-F109

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Manufacturer No:

FQA9N90C-F109

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FQA9N90C-F109

Package:

TO-3P-3, SC-65-3

Datasheet:

FQA9N90C-F109

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4.5A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-3P-3, SC-65-3

Quantity:

In Stock : 999

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Product Details

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FQA9N90C-F109 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.A device's maximum input capacitance is 2730pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 50 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.Using drive voltage (10V), this device helps reduce its power consumption.

FQA9N90C-F109 Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 100 ns
a threshold voltage of 5V

FQA9N90C-F109 Applications


There are a lot of ON Semiconductor FQA9N90C-F109 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • DC-to-DC converters
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Load switching
  • Synchronous Rectification
  • Lighting, Server, Telecom and UPS.
  • Power Management Functions
  • Power Tools
  • LCD/LED/ PDP TV Lighting
  • Telecom 1 Sever Power Supplies
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FQA9N90C-F109

technical specifications, attributes, parameters and parts with similar specifications to FQA9N90C-F109.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2007

  • Series

    QFET®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    280W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    280W

  • Turn On Delay Time

    50 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.4 Ω @ 4.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2730pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    9A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    58nC @ 10V

  • Rise Time

    120ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    75 ns

  • Turn-Off Delay Time

    100 ns

  • Continuous Drain Current (ID)

    9A

  • Threshold Voltage

    5V

  • Gate to Source Voltage (Vgs)

    30V

  • Drain Current-Max (Abs) (ID)

    9A

  • Drain to Source Breakdown Voltage

    900V

  • Avalanche Energy Rating (Eas)

    900 mJ

  • Height

    18.9mm

  • Length

    15.8mm

  • Width

    5mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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