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  • FDB3682

FDB3682

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Manufacturer No:

FDB3682

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDB3682

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

FDB3682

Description:

FDB3682 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDB3682 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 55 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 25V maximal input capacitance.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=100V.?And this device has 100V drain to source breakdown voltage.As shown in the table below, the drain current of this device is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

FDB3682 Features


the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V

FDB3682 Applications


There are a lot of ON Semiconductor FDB3682 applications of single MOSFETs transistors.

  • Synchronous Rectification
  • Power Management Functions
  • AC-DC Power Supply
  • Solar Inverter
  • LCD/LED/ PDP TV Lighting
  • PFC stages, hard switching PWM stages and resonant switching
  • Power Tools
  • Server power supplies
  • Load switching
  • Uninterruptible Power Supply
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDB3682

technical specifications, attributes, parameters and parts with similar specifications to FDB3682.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 21 hours ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Weight

    1.31247g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    PowerTrench®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    36MOhm

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Current Rating

    32A

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    95W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    95W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    9 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    36m Ω @ 32A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1250pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    6A Ta 32A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    28nC @ 10V

  • Rise Time

    46ns

  • Drive Voltage (Max Rds On,Min Rds On)

    6V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    32 ns

  • Turn-Off Delay Time

    26 ns

  • Continuous Drain Current (ID)

    32A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    6A

  • Drain to Source Breakdown Voltage

    100V

  • Avalanche Energy Rating (Eas)

    55 mJ

  • Height

    4.83mm

  • Length

    10.67mm

  • Width

    11.33mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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