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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 Infineon Technologies 0.0000
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0.00000000 download 22 Weeks Tube 2018 CoolMOS™ P7 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE 117W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 10.5A, 10V 4V @ 530μA 1952pF @ 400V 45nC @ 10V 31A Tc 600V 100A 105 mJ 10V ±20V
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0.00000000 download Cut Tape (CT) 2003 HEXFET® Discontinued 1 (Unlimited) 3 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-236AB 1.25W SWITCHING 0.045Ohm 20V SILICON N-Channel 45m Ω @ 4.2A, 4.5V 1.2V @ 250μA 740pF @ 15V 12nC @ 5V 4.2A 4.2A Ta 20V 33A
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0.00000000 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 278W 10.6 ns 650V 278W Tc 38A SWITCHING 0.099Ohm 77 ns SILICON N-Channel 99m Ω @ 12.8A, 10V 3.5V @ 1.2mA 2780pF @ 100V 127nC @ 10V 9ns 6 ns 20V 38A Tc 845 mJ 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 27 ns 40V 158W Tc 120A 0.0018Ohm 30 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 TO-220AB Single 230W 15 ns 3.7V 230W Tc 173A SWITCHING 82 ns SILICON N-Channel 3.3m Ω @ 100A, 10V 3.7V @ 150μA 7020pF @ 25V 210nC @ 10V 105ns 84 ns 20V 60V 173A Tc 700A 554 mJ 6V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) EAR99 RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Single 89W 89W Tc 61A 80 ns N-Channel 13m Ω @ 37A, 7V 700mV @ 250μA 2500pF @ 15V 58nC @ 4.5V 130ns 110 ns 10V 20V 61A Tc 4.5V 7V ±10V
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0.00000000 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W 6.3 ns 2V 71W Tc 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
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0.00000000 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.9944mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 104W 16 ns 2.35V 2.5mOhm PQFN (5x6) Single Die 29 ns 100A 20 ns N-Channel 2.5mOhm @ 50A, 10V 2.35V @ 100μA 3635pF @ 25V 55nC @ 10V 30ns 12 ns 20V 30V 2.35 V 29A Ta 100A Tc 30V 3.635nF 2.5 mΩ
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0.00000000 Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
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0.00000000 18 Weeks CoolMOS™PFD7 Active 3 (168 Hours) ROHS3 Compliant TO-261-3 Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 6W Tc N-Channel 1.5 Ω @ 700mA, 10V 4.5V @ 40μA 169pF @ 400V 4.6nC @ 10V 3.6A Tc 650V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2002 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Contains Lead 1.8A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC Surface Mount -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Not Halogen Free Single 25W 10 ns 3V 500V 25W Tc 1.8A 3Ohm 70 ns SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 190pF @ 25V 9nC @ 10V 5ns 15 ns 20V 500V 1.8A Tc 5.4A 50 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 10.668mm RoHS Compliant Lead Free 135A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) 200W 14 ns 200W Tc 135A 68 ns N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 135A Tc 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 16 ns 110W Tc 42A SWITCHING 0.026Ohm 65 ns SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 90ns 66 ns 20V 75V 42A Tc 170A
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0.00000000 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 16A 3 TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 10V ±20V
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0.00000000 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 10.668mm RoHS Compliant Lead Free 75A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 140W 18 ns 140W Tc 75A 36 ns N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 75A Tc 10V ±20V
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0.00000000 download Tape & Reel (TR) 2015 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 136W Tc SWITCHING 0.032Ohm 200V SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 34A 34A Tc 200V 136A 190 mJ 10V ±20V
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0.00000000 download 26 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.015Ohm 40V SILICON P-Channel 15m Ω @ 10.5A, 10V 3V @ 250μA 9250pF @ 25V 110nC @ 10V 10.5A 10.5A Ta 40V 43A 4.5V 10V ±20V
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0.00000000 16 Weeks Automotive, AEC-Q101, OptiMOS™-5 Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 45.5W Tc N-Channel 24m Ω @ 15A, 10V 2.2V @ 15μA 832pF @ 50V 14nC @ 10V 30A Tc 100V 4.5V 10V ±20V
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