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IRFP140NPBF
IRFP140NPBF
376-IRFP140NPBF
TO-247-3
MOSFET (Metal Oxide) N-Channel Bulk 52m Ω @ 16A, 10V ±20V 1400pF @ 25V 94nC @ 10V TO-247-3
In Stock : 999
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Product Details
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IRFP140NPBF Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device's continuous drain current (ID) is 33A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFP140NPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
a threshold voltage of 4V
IRFP140NPBF Applications
There are a lot of Infineon Technologies IRFP140NPBF applications of single MOSFETs transistors.
- Lighting, Server, Telecom and UPS.
- PFC stages, hard switching PWM stages and resonant switching
- Industrial Power Supplies
- Telecom 1 Sever Power Supplies
- LCD/LED/ PDP TV Lighting
- Power Tools
- Micro Solar Inverter
- Synchronous Rectification
- LCD/LED TV
- DC/DC converters
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IRFP140NPBF
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