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IRFR5410TRPBF
IRFR5410TRPBF
376-IRFR5410TRPBF
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5410TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 9730
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IRFR5410TRPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to deliver incredibly low on-resista nee per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The D-Pak is made to be surface mounted using wave soldering, vapor phase, or infrared technologies. For through-hole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFR5410TRPBF Features
?Extremely Low On-Resistant
?P-ChannelX
Mount Surface (IRFR5410)
Direct Lead (IRFU5410)
Process technology, advanced
? Quick Switching
?Fully Rated for Avalanches
?Lead-Free
IRFR5410TRPBF Applications
Switching applications
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IRFR5410TRPBF
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