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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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SPP10N10L SPP10N10L Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2002 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 10.3A 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 50W Tc 10.3A SWITCHING 0.21Ohm SILICON N-Channel 154m Ω @ 8.1A, 10V 2V @ 21μA 444pF @ 25V 22nC @ 10V 10.3A Tc 42.2A 60 mJ 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant 80A LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 107W Tc 80A SWITCHING 0.0067Ohm SILICON N-Channel 4.2m Ω @ 55A, 10V 2V @ 60μA 3877pF @ 15V 32nC @ 5V 80A Tc 385A 290 mJ 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Lead Free Tin 8.5A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 22mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 6.3 mm Single 2.5W 10 ns 1V 2.5W Ta 78 ns 8.5A 42 ns SILICON N-Channel 22m Ω @ 4A, 10V 1V @ 250μA 1200pF @ 25V 57nC @ 10V 37ns 40 ns 20V 30V 30V 1 V 6.7A 8.5A Ta 4.5V 10V ±20V
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0.00000000 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 150°C -55°C 3.2766mm RoHS Compliant No 8 8-PowerTDFN No SVHC 990.6μm 3.3mm Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL S-PDSO-N5 2.5W 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W 6.9 ns 22 ns 14A SWITCHING 6.2 ns N-Channel 7.8m Ω @ 12A, 10V 2.35V @ 25μA 1050pF @ 25V 16nC @ 10V 12ns 4.7 ns 20V 30V 1.8 V 14A Ta 40A Tc 96A 50 mJ
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 130A No 3 TO-220-3 No SVHC 2.54mm 4.82mm 4.826mm 6.3MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 26 ns 4V 200W Tc 130A SWITCHING 51 ns SILICON N-Channel 6.3m Ω @ 75A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 120ns 63 ns 20V 75V 75V 4 V 75A 130A Tc 270 mJ 10V ±20V
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0.00000000 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 160W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 59A 59A Tc 100V 240A 200 mJ 10V ±20V
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 140W Tc N-Channel 170mOhm @ 9.8A, 10V 5.5V @ 250μA 1100pF @ 25V 50nC @ 10V 16A Tc 200V 10V ±30V
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0.00000000 Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.008Ohm 30V SILICON N-Channel 8m Ω @ 14A, 10V 2V @ 250μA 3150pF @ 15V 51nC @ 4.5V 14A 14A Ta 30V 110A 320 mJ 2.7V 10V ±12V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount 75.891673mg -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 1 DRAIN Halogen Free Single 7.7 ns 650V 26.6W Tc 3A SWITCHING 33 ns SILICON N-Channel 1.5 Ω @ 1A, 10V 3.5V @ 100μA 225pF @ 100V 11nC @ 10V 5.9ns 18.2 ns 30V 650V 3A Tc 26 mJ 10V ±20V
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0.00000000 download 12 Weeks Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 8 8-PowerVDFN 1.7mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 125W Tc 100A N-Channel 1.7m Ω @ 100A, 10V 3.7V @ 150μA 5406pF @ 25V 152nC @ 10V 100A Tc 40V 6V 10V ±20V
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.29Ohm 150V SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 22W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 600V 26A 27 mJ 10V ±20V
IRFR12N25D IRFR12N25D Infineon Technologies 0.0000
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 144W Tc N-Channel 260m Ω @ 8.4A, 10V 5V @ 250μA 810pF @ 25V 35nC @ 10V 14A Tc 250V 10V ±30V
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0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 100mA 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 unknown Surface Mount -55°C~150°C TJ 240V MOSFET (Metal Oxide) ENHANCEMENT MODE 1A e3 MATTE TIN DUAL GULL WING 3 FET General Purpose Power Not Qualified 240V 1 SINGLE WITH BUILT-IN DIODE 360mW 360mW Ta 110mA SWITCHING 26Ohm SILICON N-Channel 14 Ω @ 100mA, 10V 1.8V @ 56μA 77pF @ 25V 3.1nC @ 10V 8ns 20V 110mA Ta 5 pF 4.5V 10V ±20V
IRF6797MTRPBF IRF6797MTRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 7 LOW CONDUCTION LOSS DirectFET™ Isometric MX 506μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 22 ns 2.8W Ta 89W Tc 36A SWITCHING 20 ns SILICON N-Channel 1.4m Ω @ 38A, 10V 2.35V @ 150μA 5790pF @ 13V 68nC @ 4.5V 32ns 15 ns 20V 25V 36A Ta 210A Tc 300A 260 mJ 4.5V 10V ±20V
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0.00000000 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 125W Tc SWITCHING 0.38Ohm 600V SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 60nC @ 10V 11A 11A Tc 600V 33A 340 mJ 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MZ No SVHC 530μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 7 ns 4V 3.6W Ta 89W Tc 67A SWITCHING 12 ns SILICON N-Channel 11m Ω @ 13.4A, 10V 4.9V @ 100μA 1350pF @ 25V 36nC @ 10V 12ns 8.7 ns 20V 60V 4 V 13.4A Ta 67A Tc 98 mJ 10V ±20V
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0.00000000 Surface Mount Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 48A AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc 48A SWITCHING 0.023Ohm SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 60ns 48A Tc 192A 220 mJ 10V ±20V
BSZ040N04LSGATMA1 BSZ040N04LSGATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 1998 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead Tin No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 69W 8.5 ns 40V 3.3mOhm PG-TSDSON-8 2.1W Ta 69W Tc 40A 33 ns N-Channel 4mOhm @ 20A, 10V 2V @ 36μA 5100pF @ 20V 64nC @ 10V 4.8ns 5.4 ns 20V 18A Ta 40A Tc 40V 5.1nF 4.5V 10V ±20V 4 mΩ
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0.00000000 download Tape & Reel (TR) 2013 CoolMOS™ CE Obsolete 3 (168 Hours) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 98W Tc N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V 9.9A Tc 500V 13V ±20V
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0.00000000 download 18 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant NOT SPECIFIED NOT SPECIFIED
IRL3803S IRL3803S Infineon Technologies 0.0000
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0.00000000 Tube 2002 HEXFET® Obsolete 1 (Unlimited) 2 Non-RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
SPD06N60C3ATMA1 SPD06N60C3ATMA1 Infineon Technologies 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 6.2A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 650V MOSFET (Metal Oxide) 74W 7 ns 600V 680mOhm PG-TO252-3-1 74W Tc 6.2A 52 ns N-Channel 750mOhm @ 3.9A, 10V 3.9V @ 260μA 620pF @ 25V 31nC @ 10V 12ns 10 ns 20V 6.2A Tc 600V 620pF 10V ±20V 750 mΩ
BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W 4 ns 36W Tc 11A 150°C SWITCHING 0.0094Ohm 14 ns SILICON N-Channel 9.4m Ω @ 24A, 10V 2.3V @ 14μA 1300pF @ 30V 9.4nC @ 4.5V 20V 60V 47A Tc 4.5V 10V ±20V
IRF6215LPBF IRF6215LPBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 110W 14 ns -4V 290mOhm TO-262 3.8W Ta 110W Tc -13A 53 ns P-Channel 290mOhm @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V 13A Tc 150V 860pF 10V ±20V 290 mΩ
IRF6794MTR1PBF IRF6794MTR1PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 3 (168 Hours) 150°C -40°C 6.35mm RoHS Compliant No 5 DirectFET™ Isometric MX No SVHC 506μm 5.05mm 1.3mOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 100W 15 ns 3mOhm DIRECTFET™ MX 2.8W Ta 100W Tc 32A 9.7 ns N-Channel 1.7mOhm @ 32A, 10V 2.35V @ 100μA 4420pF @ 13V 47nC @ 4.5V 25ns 9.6 ns 20V 25V Schottky Diode (Body) 1.8 V 32A Ta 200A Tc 25V 4.42nF 4.5V 10V ±20V 1.7 mΩ
IRF1010EPBF IRF1010EPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 2.54mm 16.51mm 4.826mm 12mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 170W 12 ns 4V 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 60V 4 V 75A 84A Tc 10V ±20V
IRFR2407TRL IRFR2407TRL Infineon Technologies 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 42A AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc 42A SWITCHING 0.026Ohm SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 90ns 30A 42A Tc 170A 130 mJ 10V ±20V
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