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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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IPB530N15N3GATMA1 IPB530N15N3GATMA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 68W 9 ns 150V 68W Tc 21A SWITCHING 0.053Ohm 13 ns SILICON N-Channel 53m Ω @ 18A, 10V 4V @ 35μA 887pF @ 75V 12nC @ 10V 3 ns 20V 21A Tc 84A 60 mJ 8V 10V ±20V
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0.00000000 download Tube 2001 TEMPFET® Obsolete 1 (Unlimited) 7 EAR99 RoHS Compliant AVALANCHE RATED TO-220-7 compliant Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T7 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR DRAIN 300W Tc SWITCHING 0.0095Ohm 49V SILICON N-Channel 6.5m Ω @ 36A, 10V 2V @ 240μA 4800pF @ 25V 232nC @ 10V Temperature Sensing Diode 80A 80A Tc 49V 320A 2000 mJ 4.5V 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 SIPMOS® yes Active 1 (Unlimited) 3 SMD/SMT EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 3 1 1 SINGLE WITH BUILT-IN DIODE Halogen Free 360mW -1.4V 250V 360mW Ta 40mA SILICON N-Channel 14 Ω @ 100μA, 10V 1V @ 56μA 76pF @ 25V 3.5nC @ 5V 5.4ns 20V 250V Depletion Mode -1.4 V 100mA Ta 0V 10V ±20V
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0.00000000 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.0065Ohm 40V SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 130A 130A Tc 40V 520A 700 mJ 4.5V 10V ±16V
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0.00000000 download Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 150°C -55°C 10.36mm RoHS Compliant 3 TO-220-3 15.95mm 4.57mm Through Hole MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO 57W 1 TO-220AB Halogen Free Single 57W 6 ns 7.6A SWITCHING 0.5Ohm 30 ns N-Channel 500m Ω @ 2.3A, 13V 3.5V @ 200μA 433pF @ 100V 18.7nC @ 10V 5ns 12 ns 20V 500V Super Junction 7.6A Tc 24A 129 mJ 13V ±20V
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0.00000000 Obsolete 1 (Unlimited)
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant No 3 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 3 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.2W 5.7 ns 2.2W Ta 42W Tc 15A SWITCHING 29 ns SILICON N-Channel 2.4m Ω @ 20A, 10V 2.2V @ 250μA 5500pF @ 15V 71nC @ 10V 5.6ns 4.8 ns 20V 15A Ta 106A Tc 30V 400A 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 100A AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 100A 0.0068Ohm SILICON N-Channel 6.8m Ω @ 66A, 10V 4V @ 250μA 6020pF @ 25V 200nC @ 10V 100A Tc 400A 810 mJ 10V ±20V
IRLU024N IRLU024N Infineon Technologies 0.0000
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0.00000000 download Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE 245 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
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0.00000000 download Tape & Reel (TR) 2005 SIPMOS® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK (TO-263AB) 95W Tc N-Channel 200mOhm @ 9A, 5V 4V @ 1mA 1120pF @ 25V 14.5A Tc 200V 10V ±20V
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0.00000000 download 16 Weeks Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 58W Tc 0.0065Ohm 40V SILICON N-Channel 6.5m Ω @ 70A, 10V 4V @ 26μA 2550pF @ 25V 32nC @ 10V 70A 70A Tc 40V 280A 72 mJ 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2002 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 17 ns 4V 330W Tc 75A SWITCHING 59 ns SILICON N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 130ns 48 ns 20V 30V 4 V 75A Tc 960A 980 mJ 10V ±20V
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0.00000000 download Tape & Reel (TR) 2009 OptiMOS™ yes Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant 3-WDSON compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 MATTE TIN BOTTOM NO LEAD 260 40 3 YES R-MBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 89W Tc SWITCHING 0.0012Ohm 30V SILICON N-Channel 1.2m Ω @ 30A, 10V 2.2V @ 250μA 16900pF @ 15V 169nC @ 10V 39A 39A Ta 180A Tc 30V 400A 290 mJ 4.5V 10V ±20V
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0.00000000 download 18 Weeks Bulk 2013 OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant Lead Free Die Surface Mount MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free N-Channel 50m Ω @ 2A, 10V 2.2V @ 250μA 1A Tj 30V 10V
IRL8113STRLPBF IRL8113STRLPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 14 ns 110W Tc 105A SWITCHING 0.006Ohm 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2017 CoolMOS™ no Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 47W Tc SWITCHING 0.65Ohm 500V SILICON N-Channel 650m Ω @ 1.8A, 13V 3.5V @ 150μA 342pF @ 100V 15nC @ 10V 6.1A 6.1A Tc 500V 19A 102 mJ 13V ±20V
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0.00000000 20 Weeks Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE 260 30 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 87W Tc SWITCHING 0.0095Ohm 30V SILICON N-Channel 13m Ω @ 15A, 10V 3V @ 250μA 1990pF @ 15V 19nC @ 4.5V 30A 61A Tc 30V 220A 42 mJ 4.5V 10V ±20V
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0.00000000 Last Time Buy ROHS3 Compliant
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 5 EAR99 6mm ROHS3 Compliant Lead Free No 8 HIGH RELIABILITY 8-PowerVDFN No SVHC 850μm 5mm 1.4MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 26 ns 1.8V 3.6W Ta 250W Tc 100A SWITCHING 31 ns SILICON N-Channel 1.4m Ω @ 50A, 10V 2.35V @ 150μA 7200pF @ 15V 120nC @ 10V 30ns 13 ns 20V 30V 40A 40A Ta 100A Tc 400A 420 mJ 4.5V 10V ±20V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 700V 42W Tc 4A SWITCHING 2Ohm SILICON N-Channel 2 Ω @ 1A, 10V 3.5V @ 70μA 163pF @ 100V 7.8nC @ 10V Super Junction 4A Tc 6.3A 11 mJ 10V ±20V
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0.00000000 download 18 Weeks Tube 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 86W Tc SWITCHING 0.6Ohm 700V SILICON N-Channel 600m Ω @ 1A, 10V 3.5V @ 210μA 474pF @ 100V 22nC @ 10V 10.5A Tc 700V 18A 55 mJ 10V ±20V
IRFSL4228PBF IRFSL4228PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) 175°C -40°C 10.668mm RoHS Compliant Lead Free 83A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -40°C~175°C TJ 150V MOSFET (Metal Oxide) 1 Single 330W 18 ns 15mOhm TO-262 330W Tc 83A 24 ns N-Channel 15mOhm @ 33A, 10V 5V @ 250μA 4530pF @ 25V 107nC @ 10V 30V 150V 83A Tc 150V 4.53nF 10V ±30V 15 mΩ
SPI80N06S2L-05 SPI80N06S2L-05 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 300W Tc 80A SWITCHING 0.006Ohm SILICON N-Channel 4.8m Ω @ 80A, 10V 2V @ 250μA 7530pF @ 25V 230nC @ 10V 80A Tc 320A 800 mJ 4.5V 10V ±20V
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 37W Tc SWITCHING 800V SILICON N-Channel 1.2 Ω @ 1.7A, 10V 3.5V @ 80μA 300pF @ 500V 11nC @ 10V 4.5A Tc 800V 11A 10 mJ 10V ±20V
IRF540Z IRF540Z Infineon Technologies 0.7085
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0.00000000 Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 92W Tc SWITCHING 0.0265Ohm 100V SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 36A 36A Tc 100V 140A 120 mJ 10V ±20V
IRF5805 IRF5805 Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 6 EAR99 Non-RoHS Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G6 150°C Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2W Ta SWITCHING 0.098Ohm 30V SILICON P-Channel 98m Ω @ 3.8A, 10V 2.5V @ 250μA 511pF @ 25V 17nC @ 10V 3.8A 3.8A Ta 30V 15A 4.5V 10V ±20V
IPB80N06S2L11ATMA1 IPB80N06S2L11ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2010 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 158W Tc 0.0147Ohm 55V SILICON N-Channel 10.7m Ω @ 60A, 10V 2V @ 93μA 2075pF @ 25V 80nC @ 10V 80A 80A Tc 55V 320A 280 mJ 4.5V 10V ±20V
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 115W Tc 0.0048Ohm 40V SILICON N-Channel 4.8m Ω @ 80A, 10V 4V @ 65μA 3900pF @ 25V 60nC @ 10V 80A 80A Tc 40V 320A 370 mJ 10V ±20V
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