Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Clamping Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRGB4062DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.82mm | Through Hole | 6.000006g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 250W | 53 ns | 89 ns | 48A | 600V | 1.95V | POWER CONTROL | 115 ns | SILICON | 22ns | 1.65V | 64 ns | 1.95V @ 15V, 24A | 164 ns | Trench | 20V | 6.5V | 41ns | 400V, 24A, 10 Ω, 15V | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IGZ50N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2008 | TrenchStop™ 5 | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | TO-247-4 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 273W | 273W | 1 | SINGLE | COLLECTOR | Halogen Free | N-CHANNEL | 85A | 650V | 650V | POWER CONTROL | SILICON | 27 ns | 2.1V @ 15V, 50A | 311 ns | Trench | 400V, 25A, 12 Ω, 15V | 109nC | 200A | 20ns/250ns | 410μJ (on), 190μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGP19NC60S | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | FREE WHEELING DIODE | TO-220-3 | Through Hole | Standard | STGP19 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 130W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | 23.5 ns | 1.9V @ 15V, 12A | 535 ns | 20V | 5.75V | 480V, 12A, 10 Ω, 15V | 54.5nC | 80A | 17.5ns/175ns | 135μJ (on), 815μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGC15T65QEX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 650V | 650V | 650V | 2.32V @ 15V, 30A | Trench Field Stop | 30A | 90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB50N120FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | EAR99 | 16.25mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | 535W | 535W | N-CHANNEL | Single | 256 ns | 100A | 1.2kV | 1.2kV | 2.2V | 2.2V @ 15V, 50A | Trench Field Stop | 20V | 1200V | 6.5V | 600V, 50A, 10 Ω, 15V | 311nC | 200A | 118ns/282ns | 4.4mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
SKW20N60HSFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | *KW20N60 | 3 | R-PSFM-T3 | Not Qualified | 178W | 178W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 130 ns | 36A | 600V | 600V | POWER CONTROL | SILICON | 30 ns | 3.15V @ 15V, 20A | 235 ns | NPT | 400V, 20A, 16 Ω, 15V | 100nC | 80A | 18ns/207ns | 690μJ | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXYN50N170CV1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | Standard | 880W | 255ns | 3.7V @ 15V, 50A | 1700V | 120A | 850V, 50A, 1 Ω, 15V | 260nC | 485A | 22ns/236ns | 8.7mJ (on), 5.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYH8N250C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 280W | 5ns | 4V @ 15V, 8A | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH1BF7RDPQ-80#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 150°C TJ | Standard | 250W | 250W | Single | 60A | 1.1kV | 1.1kV | 2.35V @ 15V, 60A | 1100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGW40NC60WD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.75mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-247-3 | No SVHC | 20.15mm | 5.15mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e3 | Tin (Sn) | STGW40 | 3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AC | N-CHANNEL | Single | 250W | 33 ns | 45 ns | 70A | 600V | 600V | 40A | POWER CONTROL | 168 ns | SILICON | 12ns | 650V | 2.9nF | 2.1V | 46 ns | 2.5V @ 15V, 30A | 280 ns | 20V | 40A | 5.75V | 390V, 30A, 10 Ω, 15V | 126nC | 230A | 33ns/168ns | 302μJ (on), 349μJ (off) | ||||||||||||||||||||||||||||||||
 |
FGH60N60SMD-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tube | 2013 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Insulated Gate BIP Transistors | 600W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | COLLECTOR | N-CHANNEL | 600W | 42ns | 60ns | POWER CONTROL | SILICON | 66 ns | 2.5V @ 15V, 60A | 139 ns | Field Stop | 20V | 600V | 120A | 6V | 20ns | 400V, 60A, 3 Ω, 15V | 280nC | 180A | 22ns/116ns | 1.59mJ (on), 390μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
|
STGW30H65FB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGW30 | 260W | 260W | Single | 30A | 650V | 2V | 1.75V | 2V @ 15V, 30A | Trench Field Stop | 400V, 30A, 10 Ω, 15V | 149nC | 120A | 37ns/146ns | 151μJ (on), 293μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGWA30H60DFB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | HB | Active | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGWA30 | 260W | 53ns | 2V @ 15V, 30A | Trench Field Stop | 600V | 60A | 400V, 30A, 10 Ω, 15V | 149nC | 120A | 37ns/146ns | 383μJ (on), 293μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGH20N6S2D | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 3 | NO | R-PSFM-T3 | COMMERCIAL | 125W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 31ns | POWER CONTROL | SILICON | 11.5 ns | 2.7V @ 15V, 7A | 205 ns | 600V | 28A | 390V, 7A, 25 Ω, 15V | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGFW30V60F | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | 15.7mm | ROHS3 Compliant | No | 3 | TO-3P-3 Full Pack | 23.2mm | 5.7mm | Through Hole | -55°C~175°C TJ | Standard | STGFW30 | 58W | Single | 58W | 60A | 600V | 600V | 2.3V | 2.3V @ 15V, 30A | Trench Field Stop | 400V, 30A, 10 Ω, 15V | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC06T60EX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | Die | 1.9V @ 15V, 10A | Trench Field Stop | 600V | 10A | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBT24N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tube | 2013 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.06 μs | 60A | 1.7kV | 2.5V | POWER CONTROL | SILICON | 190 ns | 2.5V @ 15V, 24A | 1285 ns | 20V | 1700V | 5V | 140nC | 230A | ||||||||||||||||||||||||||||||||||||||||||||
|
IXGT6N170A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*6N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 75W | 75W | 1 | COLLECTOR | N-CHANNEL | Single | 6A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 7V | 91 ns | 7V @ 15V, 3A | 271 ns | NPT | 20V | 1700V | 5V | 65ns | 850V, 6A, 33 Ω, 15V | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IXSA20N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount, Through Hole | Bulk | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | 10.66mm | RoHS Compliant | Lead Free | 35A | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.15mm | 4.82mm | Surface Mount | 1.59999g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*20N60 | 3 | Not Qualified | 190W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 190W | 30 ns | 35A | 600V | 600V | POWER CONTROL | SILICON | 30ns | 2.5V | 60 ns | 2.5V @ 15V, 16A | 390 ns | PT | 480V, 16A, 10 Ω, 15V | 33nC | 60A | 30ns/116ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
FGPF30N30DTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | Through Hole | RoHS Compliant | No | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -55°C~150°C TJ | Standard | FGPF30N30 | 46W | Single | 46W | 21 ns | 30A | 300V | 300V | 1.5V @ 15V, 10A | 39nC | 80A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXSH45N120 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 36 ns | 75A | 1.2kV | 1.2kV | MOTOR CONTROL | 360 ns | SILICON | 330 ns | 3V @ 15V, 45A | 1650 ns | 20V | 3 V | 1200V | 960V, 45A, 2.7 Ω, 15V | 150nC | 180A | 80ns/400ns | 21mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
|
HGTG7N60A4D | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 3 | NO | R-PSFM-T3 | COMMERCIAL | 125W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 34ns | POWER CONTROL | SILICON | 17 ns | 2.7V @ 15V, 7A | 205 ns | 600V | 34A | 390V, 7A, 25 Ω, 15V | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IEWS20R5135IPBXKMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | TrenchStop® | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-6 | Through Hole | -40°C~125°C TJ | Logic | 288W | 1.85V @ 15V, 20A | Trench Field Stop | 1350V | 40A | 60A | 668ns/2034ns | 1.21mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGB18N40LZ-1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | VOLTAGE CLAMPING | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | Logic | e3 | MATTE TIN | NOT SPECIFIED | NOT SPECIFIED | STGB18 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 30A | 420V | 360V | AUTOMOTIVE IGNITION | SILICON | 4450 ns | 1.7V @ 4.5V, 10A | 22200 ns | 16V | 300V, 10A, 5V | 29nC | 40A | 650ns/13.5μs | |||||||||||||||||||||||||||||||||||||||||||||||||
|
IXSH25N120A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | LOW SATURATION VOLTAGE | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 260 | 35 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 300 ns | 4V @ 15V, 25A | 1350 ns | 20V | 1200V | 8V | 960V, 25A, 18 Ω, 15V | 120nC | 80A | 100ns/450ns | 9.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
ISL9V5036S3 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | EcoSPARK® | yes | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 46A | No | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | 2.084g | -40°C~175°C TJ | 360V | Logic | ISL9V5036 | 250W | Single | 250W | 360V | 46A | 390V | 1.6V | 2.1μs | 1.6V @ 4V, 10A | 300V, 1k Ω, 5V | 32nC | -/10.8μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXRP15N120 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 300 ns | 25A | 1.2kV | 2.95V | POWER CONTROL | SILICON | 2.5V | 33.5 ns | 2.95V @ 15V, 10A | 253 ns | NPT | 20V | 1200V | 6V | 600V, 10A, 47 Ω, 15V | 36nC | 1.1mJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
|
STGW75M65DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Tube | M | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | STGW75 | 468W | 165ns | 2.1V @ 15V, 75A | Trench Field Stop | 650V | 120A | 400V, 75A, 3.3 Ω, 15V | 225nC | 225A | 47ns/125ns | 690μJ (on), 2.54mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IHY20N120R3XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2009 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | TO-247-3 Variant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | 260 | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 310W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 1.7V @ 15V, 20A | 538 ns | Trench | 1200V | 40A | 600V, 20A, 15 Ω, 15V | 211nC | 60A | -/387ns | 950μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGD18N40LZ-1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | VOLTAGE CLAMPING | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -55°C~175°C TJ | Logic | e3 | Matte Tin (Sn) | 260 | 30 | STGD18 | 3 | Insulated Gate BIP Transistors | Not Qualified | 125W | 125W | 1 | COLLECTOR | N-CHANNEL | Single | 420V | 25A | 420V | 360V | AUTOMOTIVE IGNITION | SILICON | 4450 ns | 1.7V @ 4.5V, 10A | 22200 ns | 16V | 300V, 10A, 5V | 29nC | 40A | 650ns/13.5μs |
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