Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Clamping Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXGR35N120BD1 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 247 | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*35N120 | 3 | R-PSIP-T3 | Not Qualified | 250W | 250W | 1 | ISOLATED | N-CHANNEL | Single | 40 ns | 54A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 105 ns | 3.5V @ 15V, 35A | 780 ns | 1200V | 960V, 35A, 3 Ω, 15V | 140nC | 200A | 40ns/270ns | 900μJ (on), 3.8mJ (off) | |||||||||||||||||||||||||||||||||||
 |
FGI3040G2-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Tube | 2006 | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | 2.084g | -55°C~175°C TJ | Logic | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 150W | 150W | N-CHANNEL | Single | 400V | 41A | 400V | 1.5V | 7000ns | 1.68V | 1.25V @ 4V, 6A | 12V | 2.2V | 15000ns | 21nC | 900ns/4.8μs | |||||||||||||||||||||||||||||||||||||||||||||
 |
FGH40N6S2D | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2002 | Obsolete | 1 (Unlimited) | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 290W | TO-247-3 | 48ns | 2.7V @ 15V, 20A | 600V | 75A | 390V, 20A, 3Ohm, 15V | 35nC | 180A | 8ns/35ns | 115μJ (on), 195μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BC20U-S | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | 60W | 2V @ 15V, 9A | 600V | 16A | 480V, 6.5A, 50 Ω, 15V | 27nC | 52A | 21ns/86ns | 100μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BC30F-S | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2007 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | 100W | 1.8V @ 15V, 17A | 600V | 31A | 480V, 17A, 23 Ω, 15V | 51nC | 120A | 21ns/200ns | 230μJ (on), 1.18mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGS4B60KD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2003 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | 11A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 9.652mm | Surface Mount | -55°C~175°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRGS4B60KD1PBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 63W | 1 | COLLECTOR | N-CHANNEL | Single | 63W | 93 ns | 11A | 600V | 2.5V | MOTOR CONTROL | SILICON | 23ns | 2.5V | 40 ns | 2.5V @ 15V, 4A | 199 ns | NPT | 20V | 5.5V | 89ns | 400V, 4A, 100 Ω, 15V | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | ||||||||||||||||||||||||
 |
IGW40N65H5FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 255W | N-CHANNEL | Single | 255W | 74A | 650V | 1.65V | 1.6V | 2.1V @ 15V, 40A | 20V | 4.8V | 400V, 20A, 15 Ω, 15V | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IRGPS40B120UPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Through Hole | Bulk | 2005 | Obsolete | 1 (Unlimited) | 3 | Through Hole | 15.6mm | RoHS Compliant | Lead Free | 80A | No | 3 | TO-274AA | No SVHC | 20.3mm | 5mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | 595W | 1 | COLLECTOR | N-CHANNEL | Single | 595W | 76 ns | 80A | 1.2kV | 3.71V | MOTOR CONTROL | 332 ns | SILICON | 25ns | 3.5V | 115 ns | 3.71V @ 15V, 50A | 357 ns | NPT | 1200V | 600V, 40A, 4.7 Ω, 15V | 340nC | 160A | 1.4mJ (on), 1.65mJ (off) | ||||||||||||||||||||||||||||||||||
|
IRG7PH50K10DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 400W | 400W | N-CHANNEL | Single | 130 ns | 90A | 1.2kV | 2.4V | 80ns | 2.4V | 2.4V @ 15V, 35A | 1200V | 7.5V | 110ns | 600V, 35A, 5 Ω, 15V | 300nC | 160A | 90ns/340ns | 2.3mJ (on), 1.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB40N135IHRWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | EAR99 | 16.25mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | 394W | 394W | Halogen Free | N-CHANNEL | Single | 80A | 1.35kV | 1.35kV | 2.4V | 2.7V @ 15V, 40A | Trench Field Stop | 20V | 1350V | 6.5V | 600V, 40A, 10 Ω, 15V | 234nC | 120A | -/250ns | 1.3mJ (off) | ||||||||||||||||||||||||||||||||||
|
NGTB25N120IHLWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 192W | 192W | 1 | COLLECTOR | N-CHANNEL | Single | 250W | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.85V | 2.3V @ 15V, 25A | 475 ns | 20V | 1200V | 6.5V | 600V, 25A, 10 Ω, 15V | 200nC | 200A | -/235ns | 800μJ (off) | |||||||||||||||||||||||||||||||
 |
IGW08T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 70W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 66 ns | 2.2V @ 15V, 8A | 710 ns | NPT, Trench Field Stop | 1200V | 16A | 600V, 8A, 81 Ω, 15V | 53nC | 24A | 40ns/450ns | 1.37mJ | ||||||||||||||||||||||||||||||||||||||
|
IHW40N60RFFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 305W | 1 | N-CHANNEL | Single | 80A | 600V | POWER CONTROL | SILICON | 2.4V @ 15V, 40A | 228 ns | Trench | 400V, 40A, 5.6 Ω, 15V | 220nC | 120A | -/175ns | 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
AIGB15N65F5ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 39 Weeks | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | NPT | 650V | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
78124 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FIO50-12BD | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | 5 | RoHS Compliant | Lead Free | UL RECOGNIZED | i4-Pac™-5 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5 | R-PSIP-T5 | Not Qualified | 200W | 200W | 1 | ISOLATED | N-CHANNEL | Single | 150ns | 50A | 1.2kV | 2.6V | POWER CONTROL | SILICON | 135 ns | 2.6V @ 15V, 30A | 490 ns | NPT | 1200V | 600V, 30A, 39 Ω, 15V | 150nC | 4.6mJ (on), 2.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
FID60-06D | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Lead Free | 5 | HIGH RELIABILITY | i4-Pac™-5 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | ISOLATED | N-CHANNEL | Single | 200W | 50 ns | 70ns | 65A | 600V | 600V | POWER CONTROL | 300 ns | SILICON | 1.6V | 110 ns | 2V @ 15V, 30A | 330 ns | NPT | 20V | 300V, 30A, 22 Ω, 15V | 120nC | 1mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||
|
IHW40N120R5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 394W | 1.85V @ 15V, 40A | Trench Field Stop | 1200V | 80A | 600V, 40A, 10 Ω, 15V | 310nC | 120A | -/420ns | 1.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJP60F4DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJP60F | 3 | Insulated Gate BIP Transistors | 41.2W | 41.2W | N-CHANNEL | Single | 60A | 600V | 1.82V | 1.82V @ 15V, 30A | Trench | 400V, 30A, 5 Ω, 15V | 45ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PH42U-EP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | 20.7mm | 5.3086mm | Through Hole | -55°C~175°C TJ | Standard | IRG7PH42 | Insulated Gate BIP Transistors | 385W | N-CHANNEL | Single | 385W | 25 ns | 153 ns | 90A | 1.2kV | 2V | 41ns | 229 ns | 2V | 2V @ 15V, 30A | Trench | 1200V | 6V | 86ns | 600V, 30A, 10 Ω, 15V | 157nC | 25ns/229ns | 2.11mJ (on), 1.18mJ (off) | |||||||||||||||||||||||||||||||||||||||
|
IRG4PC60UPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2000 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 75A | 3 | TO-247-3 | No SVHC | 20.701mm | 5.3086mm | Through Hole | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | Not Qualified | 520W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 520W | 39 ns | 75A | 600V | 2V | POWER CONTROL | 200 ns | SILICON | 42ns | 2V | 78 ns | 2V @ 15V, 40A | 460 ns | 20V | 6V | 480V, 40A, 5 Ω, 15V | 310nC | 300A | 39ns/200ns | 280μJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||
 |
SKP15N60XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOW CONDUCTION LOSS | TO-220-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 139W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | COLLECTOR | N-CHANNEL | 279ns | MOTOR CONTROL | SILICON | 54 ns | 2.4V @ 15V, 15A | 315 ns | NPT | 600V | 31A | 400V, 15A, 21 Ω, 15V | 76nC | 62A | 32ns/234ns | 570μJ | |||||||||||||||||||||||||||||||||||||||
|
IRG4CC50UB | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2017 | Obsolete | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | ULTRA FAST SPEED | Die | Through Hole | Standard | e0 | Tin/Lead (Sn/Pb) | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | O-XUUC-N | Insulated Gate BIP Transistors | Not Qualified | 1 | SINGLE | N-CHANNEL | SILICON | 2V @ 15V, 10A | 600V | 55A | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKW25T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2006 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | 190W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 190W | 200 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 82 ns | 2.2V @ 15V, 25A | 790 ns | NPT, Trench Field Stop | 1200V | 600V, 25A, 22 Ω, 15V | 155nC | 75A | 50ns/560ns | 4.2mJ | ||||||||||||||||||||||||||||||||||||
 |
IXGX72N60B3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 1.5V | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | |||||||||||||||||||||||||||
 |
IXGH28N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2007 | PolarHV™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*28N60 | 3 | Not Qualified | 190W | 190W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 25 ns | 66A | 600V | 1.8V | POWER CONTROL | SILICON | 45 ns | 1.8V @ 15V, 24A | 350 ns | PT | 400V, 24A, 10 Ω, 15V | 62nC | 150A | 19ns/125ns | 340μJ (on), 650μJ (off) | ||||||||||||||||||||||||||||||||||
|
SIGC07T60SNCX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 6A | NPT | 600V | 6A | 400V, 6A, 50Ohm, 15V | 18A | 24ns/248ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GT8G133(TE12L,Q) | Toshiba Semiconductor and Storage | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | 150°C TJ | Standard | 600mW | 600mW | 8-TSSOP | 400V | 2.9V | 2.9V @ 4V, 150A | 400V | 150A | 1.7μs/2μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGWA45HF60WDI | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | STGW45 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 310W | 310W | 1 | N-CHANNEL | Single | 30 ns | 90 ns | 80A | 600V | 600V | POWER CONTROL | 145 ns | SILICON | 1.9V | 2.5V @ 15V, 30A | 20V | 5.75V | 400V, 30A, 4.7 Ω, 15V | 160nC | 150A | -/145ns | 330μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
IGC20T60TEX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | ROHS3 Compliant |
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