Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRG7PH28UD1MPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 115W | 115W | N-CHANNEL | Single | 30A | 1.2kV | 2.3V | 2.3V @ 15V, 15A | Trench | 1200V | 6V | 600V, 15A, 22 Ω, 15V | 90nC | 100A | -/229ns | 543μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG6S320UTRLPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -40°C~150°C TJ | Standard | IRG6S320UPBF | 114W | 114W | Single | 330V | D2PAK | 50A | 330V | 1.65V | 1.65V @ 15V, 24A | Trench | 330V | 50A | 196V, 12A, 10Ohm | 46nC | 24ns/89ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGSL15B60KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2005 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | ULTRA FAST | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | Insulated Gate BIP Transistors | 208W | 208W | 1 | COLLECTOR | N-CHANNEL | Single | 92 ns | 31A | 600V | 2.2V | 25ns | MOTOR CONTROL | SILICON | 52 ns | 2.2V @ 15V, 15A | 231 ns | NPT | 20V | 5.5V | 400V, 15A, 22 Ω, 15V | 56nC | 62A | 34ns/184ns | 220μJ (on), 340μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IXGT28N120BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Surface Mount | Bulk | 2009 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*28N120 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 63 ns | 3.5V @ 15V, 28A | 590 ns | PT | 20V | 1200V | 5V | 320ns | 960V, 28A, 5 Ω, 15V | 92nC | 150A | 30ns/210ns | 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IRGP4660D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 330W | 330W | Single | 134W | 115 ns | 100A | 600V | 1.9V | 1.9V | 1.9V @ 15V, 48A | 400V, 48A, 10 Ω, 15V | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH30N60C3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 220W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 220W | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 915pF | 600V | 45 ns | 3V @ 15V, 20A | 160 ns | 20V | 5.5V | 300V, 20A, 5 Ω, 15V | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
SIGC08T60EX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2010 | TrenchStop™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -40°C~175°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-XUUC-N2 | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 1.9V @ 15V, 15A | Trench Field Stop | 15A | 45A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGK320N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2010 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.7kW | 1700W | 1 | COLLECTOR | N-CHANNEL | Single | 1.7kW | 500A | 600V | 1.6V | POWER CONTROL | SILICON | 600V | 115 ns | 1.6V @ 15V, 100A | 780 ns | PT | 20V | 5V | 480V, 100A, 1 Ω, 15V | 585nC | 1200A | 44ns/250ns | 2.7mJ (on), 3.5mJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IRG4PSH71KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 1999 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 16.0782mm | ROHS3 Compliant | Lead Free | 78A | No | 3 | LOW CONDUCTION LOSS | TO-274AA | No SVHC | 20.8mm | 5.3mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | Insulated Gate BIP Transistors | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 350W | 107 ns | 78A | 1.2kV | 3.9V | MOTOR CONTROL | SILICON | 84ns | 2.97V | 152 ns | 3.9V @ 15V, 42A | 660 ns | 20V | 1200V | 6V | 190ns | 800V, 42A, 5 Ω, 15V | 410nC | 156A | 67ns/230ns | 5.68mJ (on), 3.23mJ (off) | ||||||||||||||||||||||||||||||||
 |
SGW5N60RUFDTM | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | COMMERCIAL | 60W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 55ns | MOTOR CONTROL | SILICON | 39 ns | 2.8V @ 15V, 5A | 290 ns | 600V | 8A | 300V, 5A, 40 Ω, 15V | 16nC | 15A | 13ns/34ns | 88μJ (on), 107μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
|
SKB15N60 E8151 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | *KB15N60 | 4 | YES | R-PSSO-G2 | 139W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 279ns | POWER CONTROL | SILICON | 54 ns | 2.4V @ 15V, 15A | 315 ns | NPT | 600V | 31A | 400V, 15A, 21 Ω, 15V | 76nC | 62A | 32ns/234ns | 570μJ | |||||||||||||||||||||||||||||||||||||||||||||
 |
FGH40N60SMDF-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Tube | 2016 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | 6.39g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 349W | 349W | 90 ns | 80A | 600V | 2.5V | 2.5V @ 15V, 40A | Field Stop | 400V, 40A, 6 Ω, 15V | 122nC | 120A | 18ns/110ns | 1.3mJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GPA060A060MN-FD | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2014 | Active | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC40W-S | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2004 | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 160W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 160W | POWER CONTROL | SILICON | 48 ns | 2.5V @ 15V, 20A | 294 ns | 20V | 600V | 40A | 6V | 110ns | 480V, 20A, 10 Ω, 15V | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
RJP6085DPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | 178.5W | 178.5W | N-CHANNEL | 30 ns | 40A | 600V | 3.5V | 60 ns | 3.5V @ 15V, 40A | 30V | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RJH60F3DPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 4 | 178.5W | 178.5W | 140 ns | 40A | 600V | 1.82V | 1.82V @ 15V, 20A | Trench | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AUIRG4PH50S-205 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 1 (Unlimited) | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 200W | 1.7V @ 15V, 33A | 1200V | 57A | 960V, 33A, 5 Ω, 15V | 251nC | 114A | 32ns/845ns | 1.8mJ (on), 19.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBF15N300C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2013 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 (3 Leads) | Through Hole | -55°C~150°C TJ | Standard | 300W | 300W | 706 ns | 37A | 3kV | 6V | 6V @ 15V, 15A | 3000V | 1500V, 15A, 10 Ω, 15V | 267nC | 300A | 40ns/455ns | 9.15mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGK60N60 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | ULTRA FAST | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.7V | 50 ns | 1.7V @ 15V, 60A | 650 ns | PT | 20V | 5V | 570ns | 480V, 60A, 2.7 Ω, 15V | 130nC | 200A | 50ns/300ns | 8mJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
SGW10N60AFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 92W | 92W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 20A | 600V | 600V | MOTOR CONTROL | SILICON | 40 ns | 2.4V @ 15V, 10A | 224 ns | NPT | 400V, 10A, 25 Ω, 15V | 52nC | 40A | 28ns/178ns | 320μJ | |||||||||||||||||||||||||||||||||||||||||||||
|
IHW40T60FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2008 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 303W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 143ns | SILICON | 2.05V @ 15V, 40A | 272.5 ns | Trench Field Stop | 600V | 80A | 400V, 40A, 5.6 Ω, 15V | 215nC | 120A | -/186ns | 920μJ | |||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGK50N60AU1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | HIGH SPEED | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*50N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 50 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 290 ns | 2.7V @ 15V, 50A | 880 ns | 20V | 2.7 V | 5.5V | 200ns | 480V, 50A, 2.7 Ω, 15V | 200nC | 200A | 50ns/200ns | 4.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||
 |
IRGR2B60KDTRPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | Standard | IRGR2B60 | Insulated Gate BIP Transistors | 35W | 35W | N-CHANNEL | Single | 68 ns | 6.3A | 600V | 2.25V | 25ns | 2.25V @ 15V, 2A | NPT | 20V | 6V | 75ns | 400V, 2A, 100 Ω, 15V | 12nC | 8A | 11ns/150ns | 74μJ (on), 39μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SGW50N60HSFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 416W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | MOTOR CONTROL | SILICON | 79 ns | 3.15V @ 15V, 50A | 370 ns | NPT | 600V | 100A | 400V, 50A, 6.8 Ω, 15V | 179nC | 150A | 47ns/310ns | 1.96mJ | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGW30N60TPXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2006 | TrenchStop™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 200W | 200W | 1 | SINGLE | N-CHANNEL | 53A | 600V | 1.8V | POWER CONTROL | SILICON | 38 ns | 1.8V @ 15V, 30A | 279 ns | Trench Field Stop | 400V, 30A, 10.5 Ω, 15V | 130nC | 90A | 15ns/179ns | 710μJ (on), 420μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB15N120IHRWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | 3 | 333W | 333W | Single | 30A | 1.2kV | 2.5V | 2.5V @ 15V, 15A | Trench Field Stop | 1200V | 600V, 15A, 10 Ω, 15V | 160nC | 60A | -/170ns | 340μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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NGTB40N120IHLWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | LAST SHIPMENTS (Last Updated: 4 days ago) | Tube | 2006 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 260W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 260W | 80A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.9V | 2.35V @ 15V, 40A | 565 ns | Trench Field Stop | 20V | 1200V | 6.5V | 600V, 40A, 10 Ω, 15V | 420nC | 320A | -/360ns | 1.4mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
FGH12040WD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | 2012 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | 428W | 71ns | 1.2kV | 2.3V | 2.9V @ 15V, 40A | Trench Field Stop | 1200V | 80A | 600V, 40A, 23 Ω, 15V | 226nC | 100A | 45ns/560ns | 4.1mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG7PH42UD1MPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 313W | 313W | N-CHANNEL | Single | 85A | 1.2kV | 2V | 1.7V | 2V @ 15V, 30A | Trench | 1200V | 6V | 600V, 30A, 10 Ω, 15V | 270nC | 200A | -/270ns | 1.21mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PSH50UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 247 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN OVER NICKEL | 260 | 40 | R-PSFM-T3 | Insulated Gate BIP Transistors | 462W | 462W | 1 | COLLECTOR | N-CHANNEL | Single | 190 ns | 116A | 1.2kV | 2V | 60ns | POWER CONTROL | SILICON | 70 ns | 2V @ 15V, 50A | 650 ns | Trench | 30V | 1200V | 6V | 65ns | 600V, 50A, 5 Ω, 15V | 440nC | 150A | 35ns/430ns | 3.6mJ (on), 2.2mJ (off) |
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