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  • SGL160N60UFDTU

SGL160N60UFDTU

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Manufacturer No:

SGL160N60UFDTU

Manufacturer:

ON Semiconductor

HK JDW NO:

598-SGL160N60UFDTU

Package:

TO-264-3, TO-264AA

Datasheet:

SGL160N60UFDTU

Description:

SGL160N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Description


The SGL160N60UFDTU is low conduction and switching losses 600V short circuit rated ultrafast IGBT. This UFD series is intended for high-speed switching applications like motor control and general inverters. This item is intended for general use and can be used in a variety of ways. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.



Features


● Low saturation voltage

● High input impedance

● High speed switching

● High-current and low-saturation-voltage capability

● High current-handling capabilities



Applications


● Power Management

● Motor Drive & Control

● Switched-Mode Power Supplies

● Traction Motor Control

● Induction Heating


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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UPS(www.ups.com)
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From $40.00 basic shipping fee depend on zone and country.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SGL160N60UFDTU

technical specifications, attributes, parameters and parts with similar specifications to SGL160N60UFDTU.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    ACTIVE, NOT REC (Last Updated: 10 hours ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-264-3, TO-264AA

  • Number of Pins

    3

  • Weight

    6.756g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2014

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

  • HTS Code

    8541.29.00.95

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    250W

  • Current Rating

    80A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    250W

  • Input Type

    Standard

  • Turn On Delay Time

    40 ns

  • Transistor Application

    MOTOR CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    90 ns

  • Collector Emitter Voltage (VCEO)

    600V

  • Max Collector Current

    160A

  • Reverse Recovery Time

    95 ns

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    2.1V

  • Turn On Time

    150 ns

  • Test Condition

    300V, 80A, 3.9 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.6V @ 15V, 80A

  • Turn Off Time-Nom (toff)

    262 ns

  • Gate Charge

    345nC

  • Current - Collector Pulsed (Icm)

    300A

  • Td (on/off) @ 25°C

    40ns/90ns

  • Switching Energy

    2.5mJ (on), 1.76mJ (off)

  • Height

    26mm

  • Length

    20mm

  • Width

    5mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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