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  • PSMN070-200B,118

PSMN070-200B,118

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Manufacturer No:

PSMN070-200B,118

Manufacturer:

Nexperia USA Inc.

HK JDW NO:

554-PSMN070-200B,118

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

PSMN070-200B,118

Description:

PSMN070-200B,118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at HK JDW

Quantity:

In Stock : 999

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PSMN070-200B,118 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 462 mJ.A device's maximal input capacitance is 4570pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Powered by 200V, it supports the maximal dual supply voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

PSMN070-200B,118 Features


the avalanche energy rating (Eas) is 462 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns

PSMN070-200B,118 Applications


There are a lot of Nexperia USA Inc. PSMN070-200B,118 applications of single MOSFETs transistors.

  • Load switching
  • Battery Protection Circuit
  • Industrial Power Supplies
  • LCD/LED TV
  • Consumer Appliances
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Power Management Functions
  • Lighting, Server, Telecom and UPS.
  • Solar Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

PSMN070-200B,118

technical specifications, attributes, parameters and parts with similar specifications to PSMN070-200B,118.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    TrenchMOS™

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    70MOhm

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    250W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    250W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    22 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    70m Ω @ 17A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    4570pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    35A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    77nC @ 10V

  • Rise Time

    100ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    90 ns

  • Turn-Off Delay Time

    80 ns

  • Continuous Drain Current (ID)

    35A

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    200V

  • Drain to Source Breakdown Voltage

    200V

  • Avalanche Energy Rating (Eas)

    462 mJ

  • Radiation Hardening

    No

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

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