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Home Home Discrete Semiconductors Single MOSFETs Transistors IRF9530NSTRRPBF
IRF9530NSTRRPBF
  • IRF9530NSTRRPBF
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IRF9530NSTRRPBF

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Manufacturer No:

IRF9530NSTRRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF9530NSTRRPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRF9530NSTRRPBF

Description:

MOSFET P-CH 100V 14A D2PAK

Quantity:

Add to RFQ list

In Stock : 999

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 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF9530NSTRRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF9530NSTRRPBF.

  • Type
    Parameter
    Select All

  • Packaging

    Tape & Reel (TR)

  • Published

    1998

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Reach Compliance Code

    not_compliant

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    3.8W Ta 79W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    200m Ω @ 8.4A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    760pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    14A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    58nC @ 10V

  • Drain to Source Voltage (Vdss)

    100V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Drain Current-Max (Abs) (ID)

    14A

  • Drain-source On Resistance-Max

    0.2Ohm

  • Pulsed Drain Current-Max (IDM)

    56A

  • DS Breakdown Voltage-Min

    100V

  • Avalanche Energy Rating (Eas)

    250 mJ

  • RoHS Status

    ROHS3 Compliant

  • Factory Lead Time

    10 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

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United Kingdom/GBP Summary
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