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NTD2955T4G
NTD2955T4G
598-NTD2955T4G
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 180m Ω @ 6A, 10V ±20V 750pF @ 25V 30nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock : 999
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Product Details
Purchasing and Inquiry
NTD2955T4G Description
The NTD2955T4G Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
NTD2955T4G Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free and RoHS Compliant
NTD2955T4G Applications
Switching Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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FedEx International, 5-7 business days.
The following are some common countries' logistic time.
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NTD2955T4G
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