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NTD14N03RT4G

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Manufacturer No:

NTD14N03RT4G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTD14N03RT4G

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

NTD14N03RT4G

Description:

NTD14N03RT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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NTD14N03RT4G Description


NTD14N03RT4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 25V. The operating temperature of the NTD14N03RT4G is -55°C~150°C TJ and its maximum power dissipation is 20.8W Tc. NTD14N03RT4G has 3 pins and it is available in Tape & Reel (TR) packaging way.



NTD14N03RT4G Features


  • Planar HD3e Process for Fast Switching Performance

  • Low RDS(on) to Minimize Conduction Loss

  • Low Ciss to Minimize Driver Loss

  • Low Gate Charge

  • Optimized for High Side Switching Requirements in High?Efficiency DC?DC Converters

  • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant



NTD14N03RT4G Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTD14N03RT4G

technical specifications, attributes, parameters and parts with similar specifications to NTD14N03RT4G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    130MOhm

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    25V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Current Rating

    14A

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    1.04W Ta 20.8W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.56W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    3.8 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    95m Ω @ 5A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    115pF @ 20V

  • Current - Continuous Drain (Id) @ 25°C

    2.5A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    1.8nC @ 5V

  • Rise Time

    27ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    27 ns

  • Turn-Off Delay Time

    9.6 ns

  • Continuous Drain Current (ID)

    14A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    25V

  • Pulsed Drain Current-Max (IDM)

    28A

  • Height

    2.38mm

  • Length

    6.73mm

  • Width

    6.22mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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