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MTP50P03HDLG
MTP50P03HDLG
598-MTP50P03HDLG
TO-220-3
MTP50P03HDLG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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MTP50P03HDLG Description
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin
against unexpected voltage transients.
MTP50P03HDLG Features
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
These are Pb?Free Devices*
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MTP50P03HDLG
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