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MTP2P50EG
MTP2P50EG
598-MTP2P50EG
TO-220-3
MTP2P50EG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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MTP2P50EG Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage?blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for high voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP2P50EG Features
Robust High Voltage Termination
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
This is a Pb?Free Device*
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MTP2P50EG
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