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  • MTP10N10ELG

MTP10N10ELG

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Manufacturer No:

MTP10N10ELG

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MTP10N10ELG

Package:

TO-220-3

Datasheet:

MTP10N10ELG

Description:

MTP10N10ELG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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MTP10N10ELG Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin

against unexpected voltage transients



MTP10N10ELG Features

Avalanche Energy Specified

Source?to?Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

Pb?Free Package is Available


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MTP10N10ELG

technical specifications, attributes, parameters and parts with similar specifications to MTP10N10ELG.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    LAST SHIPMENTS (Last Updated: 22 hours ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2010

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    10A

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    1.75W Ta 40W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    40W

  • Case Connection

    DRAIN

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    220m Ω @ 5A, 5V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1040pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    10A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    15nC @ 5V

  • Rise Time

    74ns

  • Drive Voltage (Max Rds On,Min Rds On)

    5V

  • Vgs (Max)

    ±15V

  • Fall Time (Typ)

    38 ns

  • Turn-Off Delay Time

    17 ns

  • Continuous Drain Current (ID)

    10A

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    15V

  • Drain-source On Resistance-Max

    0.22Ohm

  • Drain to Source Breakdown Voltage

    100V

  • Avalanche Energy Rating (Eas)

    50 mJ

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

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