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MMBT3906-G
MMBT3906-G
186-MMBT3906-G
TO-236-3, SC-59, SOT-23-3
MMBT3906-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at HK JDW
In Stock : 999
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Product Details
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MMBT3906-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.300MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology MMBT3906-G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
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MMBT3906-G
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