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2N3906-G
2N3906-G
186-2N3906-G
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N3906-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at HK JDW
In Stock : 999
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Product Details
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2N3906-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 1V.A collector emitter saturation voltage of -400mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 250MHz.A maximum collector current of 200mA volts can be achieved.
2N3906-G Features
the DC current gain for this device is 30 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
2N3906-G Applications
There are a lot of Comchip Technology 2N3906-G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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2N3906-G
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