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  • IRS2304PBF

IRS2304PBF

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Manufacturer No:

IRS2304PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRS2304PBF

Package:

8-DIP (0.300, 7.62mm)

Datasheet:

IRS2304PBF

Description:

Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 600V V 8-DIP (0.300, 7.62mm) IRS2304PBF Half-Bridge

Quantity:

In Stock : 999

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IRS2304PBF Overview


Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Gate drivers is packaged in the way of Tube.Through Hole is mounted in the way.Using a 10V~20V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.Mosfet driver is possible to use this device at temperatures as low as -40°C~150°C TJ.Non-Inverting is used as the input type in this program.As a result of its configuration, it contains a maximum of 8 terminations.There are numerous related parts listed under its base part number IRS2304PBF.Mosfet driver is mounted using the Through Hole method.During design, it is configured with 8 pins.In order to operate, a voltage of 15V has to be applied.An output current as high as 600mA can be achieved at maximum power.Several electronic components are included in its subcategory of MOSFET Drivers.The high-side voltage - Max (Bootstrap) can be up to 600V.Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.The output current of this device can be set to 130mA.This device has a maximum power dissipation of 1W, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 240μA.Due to its power supplies of 15V, it solves the power supply problem for a wide range of applications.620V is the output voltage.

IRS2304PBF Features


Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W

IRS2304PBF Applications


There are a lot of Infineon Technologies IRS2304PBF gate drivers applications.

  • Welding
  • DC-DC Converters
  • High power buffers
  • Isolated Supplies for controller area network (CAN),
  • Topologies
  • High frequency line drivers
  • Broadcast equipment
  • Refrigerator
  • Portable Media Players
  • High-voltage isolated DC-DC converters
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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRS2304PBF

technical specifications, attributes, parameters and parts with similar specifications to IRS2304PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    8-DIP (0.300, 7.62mm)

  • Number of Pins

    8

  • Operating Temperature

    -40°C~150°C TJ

  • Packaging

    Tube

  • Published

    1996

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Subcategory

    MOSFET Drivers

  • Max Power Dissipation

    1W

  • Technology

    CMOS

  • Voltage - Supply

    10V~20V

  • Terminal Position

    DUAL

  • Number of Functions

    1

  • Supply Voltage

    15V

  • Base Part Number

    IRS2304PBF

  • Number of Outputs

    2

  • Output Voltage

    620V

  • Max Output Current

    600mA

  • Power Supplies

    15V

  • Nominal Supply Current

    240μA

  • Power Dissipation

    1W

  • Output Current

    130mA

  • Max Supply Current

    240μA

  • Propagation Delay

    210 ns

  • Input Type

    Non-Inverting

  • Turn On Delay Time

    150 ns

  • Rise Time

    120ns

  • Fall Time (Typ)

    50 ns

  • Turn-Off Delay Time

    150 ns

  • Release Time

    140 ns

  • Rise / Fall Time (Typ)

    70ns 35ns

  • Channel Type

    Independent

  • Driven Configuration

    Half-Bridge

  • Gate Type

    IGBT, N-Channel MOSFET

  • Current - Peak Output (Source, Sink)

    290mA 600mA

  • Logic Voltage - VIL, VIH

    0.7V 2.3V

  • Built-in Protections

    TRANSIENT; UNDER VOLTAGE

  • High Side Voltage - Max (Bootstrap)

    600V

  • Height

    4.9276mm

  • Length

    10.8966mm

  • Width

    7.11mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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