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  • IRFH7911TRPBF

IRFH7911TRPBF

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Manufacturer No:

IRFH7911TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFH7911TRPBF

Package:

18-PowerVQFN

Datasheet:

IRFH7911TRPBF

Description:

IRFH7911TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRFH7911TRPBF           Description

 

  In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.

 

IRFH7911TRPBF              Features


Control and synchronous FET in one package

Low charge control MOSFET(8.3 nC typical)

Low Rpso synchronous MOSFET(< 3.0 m|?)

100% Rg tested

Low Profile(?ü0.9 mm)

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Leadno Bromide and noHalogen

MSL2.Consumer Qualification

 

IRFH7911TRPBF               Applications 


Control and synchronous MOSFET for buck converters

 



 


 

 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFH7911TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFH7911TRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    39 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    18-PowerVQFN

  • Number of Pins

    18

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2011

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    2 (1 Year)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Resistance

    8.6MOhm

  • Terminal Finish

    Matte Tin (Sn)

  • Additional Feature

    HIGH RELIABILITY

  • Subcategory

    FET General Purpose Power

  • Max Power Dissipation

    3.4W

  • Terminal Position

    QUAD

  • Terminal Form

    NO LEAD

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    IRFH7911PBF

  • JESD-30 Code

    R-PQFP-N6

  • Qualification Status

    Not Qualified

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.4W

  • Case Connection

    DRAIN SOURCE

  • Power - Max

    2.4W 3.4W

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    8.6m Ω @ 12A, 10V

  • Vgs(th) (Max) @ Id

    2.35V @ 25μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1060pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    13A 28A

  • Gate Charge (Qg) (Max) @ Vgs

    12nC @ 4.5V

  • Continuous Drain Current (ID)

    13A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    100A

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    2.35 V

  • Height

    939.8μm

  • Length

    5.9944mm

  • Width

    5mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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