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  • AUIRFN8459TR

AUIRFN8459TR

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Manufacturer No:

AUIRFN8459TR

Manufacturer:

Infineon Technologies

HK JDW NO:

376-AUIRFN8459TR

Package:

8-PowerTDFN

Datasheet:

AUIRFN8459TR

Description:

AUIRFN8459TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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AUIRFN8459TR      Description


 Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 ??C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the product an extremely efficient and reliable device for automotive and a variety of other applications.


AUIRFN8459TR       Features


?¤ Advanced Process Technology

?¤ Dual N-Channel MOSFET

?¤ Ultra Low On-Resistance

?¤ 175??C Operating Temperature

?¤ Fast Switching

?¤ Repetitive Avalanche Allowed up to Tjmax

?¤ Lead-Free, RoHS Compliant

?¤ Automotive Qualified *

 

AUIRFN8459TR              Applications


?¤ 12V Automotive Systems

?¤ Brushed DC Motor

?¤ Braking

?¤ Transmission

 



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4. Shipping Cost

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

AUIRFN8459TR

technical specifications, attributes, parameters and parts with similar specifications to AUIRFN8459TR.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    11 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2014

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Resistance

    4.8mOhm

  • Additional Feature

    ULTRA LOW RESISTANCE

  • Max Power Dissipation

    50W

  • Terminal Form

    FLAT

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Reference Standard

    AEC-Q101

  • JESD-30 Code

    R-PDSO-F6

  • Number of Elements

    2

  • Number of Channels

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Turn On Delay Time

    10 ns

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    5.9m Ω @ 40A, 10V

  • Vgs(th) (Max) @ Id

    3.9V @ 50μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2250pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    60nC @ 10V

  • Rise Time

    55ns

  • Drain to Source Voltage (Vdss)

    40V

  • Fall Time (Typ)

    42 ns

  • Turn-Off Delay Time

    25 ns

  • Continuous Drain Current (ID)

    50A

  • Gate to Source Voltage (Vgs)

    20V

  • DS Breakdown Voltage-Min

    40V

  • Avalanche Energy Rating (Eas)

    66 mJ

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Standard

  • RoHS Status

    ROHS3 Compliant

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