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  • IRF7907TRPBF

IRF7907TRPBF

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Manufacturer No:

IRF7907TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF7907TRPBF

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

IRF7907TRPBF

Description:

IRF7907TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRF7907TRPBF             Description

 

  These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 150 °C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space, and can also be used in magnetic tapes and reels.

 

IRF7907TRPBF             Features


· Advanced Planar Technology

· Ultra Low On-Resistance

· Logic Level Gate Drive

· Dual N and P Channel MOSFET

· Surface Mount

· Available in Tape & Reel

· 150°C Operating Temperature

· Lead-Free, RoHS Compliant

· Automotive Qualified

 

IRF7907TRPBF                 Applications


The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.

 



 



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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF7907TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF7907TRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2008

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Max Power Dissipation

    2W

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    IRF7907PBF

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2W

  • FET Type

    2 N-Channel (Dual)

  • Rds On (Max) @ Id, Vgs

    16.4m Ω @ 9.1A, 10V

  • Vgs(th) (Max) @ Id

    2.35V @ 25μA

  • Input Capacitance (Ciss) (Max) @ Vds

    850pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    9.1A 11A

  • Gate Charge (Qg) (Max) @ Vgs

    10nC @ 4.5V

  • Continuous Drain Current (ID)

    11A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Avalanche Energy Rating (Eas)

    15 mJ

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Height

    1.4986mm

  • Length

    4.9784mm

  • Width

    3.9878mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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