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  • IRF7311TRPBF

IRF7311TRPBF

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Manufacturer No:

IRF7311TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF7311TRPBF

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

IRF7311TRPBF

Description:

IRF7311TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRF7311TRPBF    Description


  International Rectifier's fifth generation HEXFET uses advanced technology to achieve the advantage of extremely low on-resistance per silicon area. Coupled with the well-known fast switching speed and rugged device design of HEXFET Power MOSFET, designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.

The SO-8 has been modified through a custom lead frame to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to significantly reduce circuit board space. The package is designed for gas phase infrared or wave soldering technology.

 

IRF7311TRPBF     Features


Generation V Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET Surface Mount

Fully Avalanche Rated

 Lead-Free

 

IRF7311TRPBF      Applications


designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.

 

 





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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF7311TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF7311TRPBF.

  • Type
    Parameter
    Select All
  • Max Power Dissipation

    2W

  • Terminal Form

    GULL WING

  • Current Rating

    6.6A

  • Base Part Number

    IRF7311PBF

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2W

  • Turn On Delay Time

    8.1 ns

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    29m Ω @ 6A, 4.5V

  • Vgs(th) (Max) @ Id

    700mV @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    900pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    27nC @ 4.5V

  • Rise Time

    17ns

  • Fall Time (Typ)

    31 ns

  • Turn-Off Delay Time

    38 ns

  • Continuous Drain Current (ID)

    6.6A

  • Threshold Voltage

    700mV

  • Gate to Source Voltage (Vgs)

    12V

  • Drain to Source Breakdown Voltage

    20V

  • Avalanche Energy Rating (Eas)

    100 mJ

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Recovery Time

    77 ns

  • FET Feature

    Logic Level Gate

  • Height

    1.4986mm

  • Length

    4.9784mm

  • Width

    3.9878mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2004

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Resistance

    29mOhm

  • Terminal Finish

    Matte Tin (Sn)

  • Additional Feature

    AVALANCHE RATED, ULTRA LOW RESISTANCE

  • Voltage - Rated DC

    20V

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