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  • HUF75333P3

HUF75333P3

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Manufacturer No:

HUF75333P3

Manufacturer:

ON Semiconductor

HK JDW NO:

598-HUF75333P3

Package:

TO-220-3

Datasheet:

HUF75333P3

Description:

HUF75333P3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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HUF75333P3    Description


  These N-channel power MOSFET are manufactured using innovative UltraFET processes. This advanced technology achieves the lowest possible on-resistance per silicon area, resulting in excellent performance. The device can withstand high energy in avalanche mode, and the diode shows very low reverse recovery time and stored charge. It is designed for applications where power efficiency is very important, such as switching regulators, switch converters, motor drivers, relay drivers, low voltage bus switches and power management in portable and battery powered products.

 

HUF75333P3    Features


? 66A, 55V

? Simulation Models

- Temperature Compensated PSPICE? and SABER?

Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA75333

 

HUF75333P3     Applications


switching regulators

switch converters

 motor drivers

relay drivers

low voltage bus switches

power management


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

HUF75333P3

technical specifications, attributes, parameters and parts with similar specifications to HUF75333P3.

  • Type
    Parameter
    Select All
  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Supplier Device Package

    TO-220-3

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2002

  • Series

    UltraFET™

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Max Operating Temperature

    175°C

  • Min Operating Temperature

    -55°C

  • Voltage - Rated DC

    55V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    60A

  • Number of Elements

    1

  • Power Dissipation-Max

    150W Tc

  • Element Configuration

    Single

  • Power Dissipation

    150W

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    16mOhm @ 66A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1300pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    66A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    85nC @ 20V

  • Rise Time

    55ns

  • Drain to Source Voltage (Vdss)

    55V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    25 ns

  • Turn-Off Delay Time

    11 ns

  • Continuous Drain Current (ID)

    66A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    55V

  • Input Capacitance

    1.3nF

  • Drain to Source Resistance

    16mOhm

  • Rds On Max

    16 mΩ

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

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