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FQD18N20V2TM
FQD18N20V2TM
598-FQD18N20V2TM
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 140m Ω @ 7.5A, 10V ±30V 1080pF @ 25V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock : 999
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Product Details
Purchasing and Inquiry
On Semiconductor produces the FQD18N20V2TM N-Channel MOSFET. A patented planar stripe and DMOS technology is used to create this N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. It is appropriate for switched mode power supply, active power factor correction (PFC), and electronic light ballasts, according to the FQD18N20V2TMdatasheet.
FQD18N20V2TM Features
20nC Typical low gate charge
15A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 7.5A
Low gate charge ( Typ. 20nC)
Low Crss ( Typ. 25pF)
100% avalanche testedcapability
FQD18N20V2TM Applications
LCD TV
PDP TV
LED TV
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FQD18N20V2TM
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