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FQB22P10TM
FQB22P10TM
598-FQB22P10TM
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB22P10TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
Description
The FQB22P10TM is a planar stripe and DMOS-produced QFET? P-channel enhancement-mode Power MOSFET. This sophisticated MOSFET technology was specifically designed to lower ON-state resistance and provide enhanced switching performance as well as strong avalanche energy strength. It's ideal for applications like switched-mode power supply, audio amplifiers, and variable switching power.
Features
● Low Gate Charge (Typ. 40 nC)
● Low Crss (Typ. 160 pF)
● 100% avalanche tested
● 40nC typical low gate charge
● 160pF typical low Crss
● 175°C Maximum Junction Temperature Rating
Applications
● Use for switching and amplifying electronic signals
● As an inverter
● In digital circuit
● Use as a high-frequency amplifier
● Circuit
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FQB22P10TM
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