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  • FGA50N100BNTDTU

FGA50N100BNTDTU

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Manufacturer No:

FGA50N100BNTDTU

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FGA50N100BNTDTU

Package:

TO-3P-3, SC-65-3

Datasheet:

FGA50N100BNTDTU

Description:

FGA50N100BNTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FGA50N100BNTDTU Description


The FGA50N100BNTDTU is a 1000 V NPT Trench IGBT using Fairchild's proprietary trench design and advanced NPT technology.



FGA50N100BNTDTU Features 


  • High-Speed Switching

  • Low Saturation Voltage: VCE(sat) = 2.5V @ IC = 60A

  • High Input Impedance



FGA50N100BNTDTU Applications


  • UPS, Welder, Induction Heating, Microwave Oven


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The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FGA50N100BNTDTU

technical specifications, attributes, parameters and parts with similar specifications to FGA50N100BNTDTU.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    5 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2013

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • HTS Code

    8541.29.00.95

  • Subcategory

    Insulated Gate BIP Transistors

  • Max Power Dissipation

    156W

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    156W

  • Input Type

    Standard

  • Transistor Application

    AUTOMOTIVE IGNITION

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    1kV

  • Max Collector Current

    50A

  • Reverse Recovery Time

    1.5μs

  • Collector Emitter Breakdown Voltage

    1kV

  • Voltage - Collector Emitter Breakdown (Max)

    1000V

  • Collector Emitter Saturation Voltage

    2.5V

  • Turn On Time

    460 ns

  • Vce(on) (Max) @ Vge, Ic

    2.9V @ 15V, 60A

  • Turn Off Time-Nom (toff)

    760 ns

  • IGBT Type

    NPT and Trench

  • Gate Charge

    275nC

  • Current - Collector Pulsed (Icm)

    100A

  • Gate-Emitter Voltage-Max

    25V

  • Gate-Emitter Thr Voltage-Max

    7V

  • Fall Time-Max (tf)

    250ns

  • Height

    20.1mm

  • Length

    15.8mm

  • Width

    5mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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United Kingdom/GBP Summary
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