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  • FGA180N33ATTU

FGA180N33ATTU

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Manufacturer No:

FGA180N33ATTU

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FGA180N33ATTU

Package:

TO-3P-3, SC-65-3

Datasheet:

FGA180N33ATTU

Description:

FGA180N33ATTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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FGA180N33ATTU Description


FGA180N33ATTU is a type of 330V, 180A PDP Trench IGBT developed by ON Semiconductor. It is specifically designed based on novel trench IGBT technology to maintain high current capability, high input impedance, and fast switching. The FGA180N33ATTU IGBT is well suited for PDP applications requiring low conduction and switching losses.



FGA180N33ATTU Features


High current capability

High input impedance

Fast switching

Package: TO-3P



FGA180N33ATTU Applications


PDP system


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FGA180N33ATTU

technical specifications, attributes, parameters and parts with similar specifications to FGA180N33ATTU.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    44 Weeks

  • Lifecycle Status

    ACTIVE, NOT REC (Last Updated: 3 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    MATTE TIN

  • Additional Feature

    LOW CONDUCTION LOSS

  • HTS Code

    8541.29.00.95

  • Max Power Dissipation

    390W

  • Number of Elements

    1

  • Element Configuration

    Single

  • Input Type

    Standard

  • Power - Max

    390W

  • Transistor Application

    POWER CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    330V

  • Max Collector Current

    180A

  • Reverse Recovery Time

    27 ns

  • Collector Emitter Breakdown Voltage

    330V

  • Turn On Time

    101 ns

  • Vce(on) (Max) @ Vge, Ic

    1.4V @ 15V, 40A

  • Turn Off Time-Nom (toff)

    362 ns

  • IGBT Type

    Trench

  • Gate Charge

    169nC

  • Current - Collector Pulsed (Icm)

    450A

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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