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FDS8882
FDS8882
598-FDS8882
8-SOIC (0.154, 3.90mm Width)
FDS8882 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDS8882 Description
FDS8882 is a 30V N-Channel PowerTrench? MOSFET. The FDS8882 has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDS8882 is in the SOIC-8 package with 2.5W power dissipation.
FDS8882 Features
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
High-performance trench technology for extremely low rDS(on) and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
FDS8882 Applications
Notebook System Regulators
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator
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FDS8882
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