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  • FDS2672

FDS2672

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Manufacturer No:

FDS2672

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDS2672

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

FDS2672

Description:

FDS2672 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDS2672 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 37.5 mJ.A device's maximum input capacitance is 2535pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device conducts a continuous drain current (ID) of 3.9A, which is the maximum continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.9V.Using drive voltage (6V 10V) reduces this device's overall power consumption.

FDS2672 Features


the avalanche energy rating (Eas) is 37.5 mJ
a continuous drain current (ID) of 3.9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 50A.
a threshold voltage of 2.9V

FDS2672 Applications


There are a lot of ON Semiconductor FDS2672 applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Motor control
  • Power Management Functions
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Power Tools
  • AC-DC Power Supply
  • DC-to-DC converters
  • General Purpose Interfacing Switch
  • Uninterruptible Power Supply
  • Battery Protection Circuit
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDS2672

technical specifications, attributes, parameters and parts with similar specifications to FDS2672.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    11 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Weight

    130mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    UltraFET™

  • JESD-609 Code

    e4

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Resistance

    70mOhm

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Current Rating

    3.9A

  • Number of Elements

    1

  • Power Dissipation-Max

    2.5W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.5W

  • Turn On Delay Time

    22 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    70m Ω @ 3.9A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2535pF @ 100V

  • Current - Continuous Drain (Id) @ 25°C

    3.9A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    46nC @ 10V

  • Rise Time

    10ns

  • Drive Voltage (Max Rds On,Min Rds On)

    6V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    10 ns

  • Turn-Off Delay Time

    35 ns

  • Continuous Drain Current (ID)

    3.9A

  • Threshold Voltage

    2.9V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    200V

  • Pulsed Drain Current-Max (IDM)

    50A

  • Dual Supply Voltage

    200V

  • Avalanche Energy Rating (Eas)

    37.5 mJ

  • Nominal Vgs

    2.9 V

  • Height

    1.5mm

  • Length

    5mm

  • Width

    4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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