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  • FDPF770N15A

FDPF770N15A

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Manufacturer No:

FDPF770N15A

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDPF770N15A

Package:

TO-220-3 Full Pack

Datasheet:

FDPF770N15A

Description:

FDPF770N15A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDPF770N15A Description


This N-Channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which has been specifically designed to reduce the on-state resistance while preserving excellent switching performance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



FDPF770N15A Features


? RDS(on) = 60 mQ (Typ.) @ 10 V, lD = 10 A


? Quick Switching


? Minimal Gate Fee


? Extremely Low RDS with High Performance Trench Technology (on)


? Exceptional Ability to Handle High Power and Current


? RoHS conformant



FDPF770N15A Applications


?Consumer electronics


?LED TV


?Synchronized rectifying for ATX, servers, and telecom power supplies


?A backup power supply


?Miniature Solar Inverter


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDPF770N15A

technical specifications, attributes, parameters and parts with similar specifications to FDPF770N15A.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 6 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Weight

    2.27g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2013

  • Series

    PowerTrench®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    ULTRA-LOW RESISTANCE

  • HTS Code

    8541.29.00.95

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Number of Elements

    1

  • Power Dissipation-Max

    21W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    20W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    12 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    77m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    765pF @ 75V

  • Current - Continuous Drain (Id) @ 25°C

    10A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    11.2nC @ 10V

  • Rise Time

    8ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    3 ns

  • Turn-Off Delay Time

    15 ns

  • Continuous Drain Current (ID)

    10A

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Drain-source On Resistance-Max

    0.077Ohm

  • Drain to Source Breakdown Voltage

    150V

  • Pulsed Drain Current-Max (IDM)

    40A

  • Height

    16.07mm

  • Length

    10.36mm

  • Width

    4.9mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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