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FDP2D3N10C
FDP2D3N10C
598-FDP2D3N10C
TO-220-3
FDP2D3N10C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDP2D3N10C IGBT Description
The FDP2D3N10C IGBT is widely used in solar inverters, EVs (electrical vehicles), and HVDC (high voltage, direct current) systems. This IGBT is able to hold a voltage of 1200 V at its Collector-Emitter junction. It also has a Gate-Emitter voltage to ensure situation status and the maximum Collector current would be 80 A @25 ℃.
FDP2D3N10C IGBT Features
High power density with Shielded gate technology
Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
RoHS Compliant
Power Density & Shielded Gate
Low Vds spike internal snubber function.
Low Qrr/Trr
Low switching loss
Good EMI performance
Extremely Low Reverse Recovery Charge, Qrr
High Power and Current Handling Capability
100% UIL Tested
Soft recovery performance
High-Performance Trench Technology for Extremely Low RDS(on)
Low Gate Charge, QG = 108nC ( Typ.)
FDP2D3N10C IGBT Applications
Server
Telecom
Synchronous Rectification
Micro Solar Inverter
Computing
Motor Drive
Uninterruptible Power Supplies
Motor drives and Uninterruptible Power Supplies
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FDP2D3N10C
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