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FDMS8320LDC
FDMS8320LDC
598-FDMS8320LDC
8-PowerTDFN
FDMS8320LDC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
FDMS8320LDC Description
This N-Channel MOSFET is produced using an advanced Power Trench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMS8320LDC Features
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS8320LDC Applications
Energy Generation & Distribution
Power Management
Consumer Electronics
Portable Devices
Industrial
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FDMS8320LDC
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