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FDMS6673BZ
FDMS6673BZ
598-FDMS6673BZ
8-PowerTDFN
FDMS6673BZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDMS6673BZ Description
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.
FDMS6673BZ Features
Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
Advanced Package and Silicon combination for low rDS(on)
HBM ESD protection level of 8 kV typical (Note 3)
MSL1 robust package design
RoHS Compliant
FDMS6673BZ Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
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FDMS6673BZ
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