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FDMS3672
FDMS3672
598-FDMS3672
8-PowerWDFN
FDMS3672 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
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FDMS3672 Description
FDMS3672 is a 100V N-Channel UltraFET Trench MOSFET. The onsemi FDMS3672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the FDMS3672 is ideal for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS3672 is in the Power-56-8 package with 2.5W power dissipation.
FDMS3672 Features
Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
Typical Qg = 31 nC at VGS = 10 V
Low Miller Charge
Optimized efficiency at high frequencies
FDMS3672 Applications
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator
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FDMS3672
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