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  • FDME1023PZT

FDME1023PZT

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Manufacturer No:

FDME1023PZT

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDME1023PZT

Package:

6-UFDFN Exposed Pad

Datasheet:

FDME1023PZT

Description:

FDME1023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDME1023PZT      Description

 

The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved.The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.


FDME1023PZT      Features

 

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A

Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A

Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A

Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

Free from halogenated compounds and antimony oxides

HBM ESD protection level > 1600V (Note3)

RoHS Compliant


FDME1023PZT        Applications


This product is general usage and suitable for many different applications.

 

  





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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDME1023PZT

technical specifications, attributes, parameters and parts with similar specifications to FDME1023PZT.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    6-UFDFN Exposed Pad

  • Number of Pins

    6

  • Weight

    25.2mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • Series

    PowerTrench®

  • JESD-609 Code

    e4

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Additional Feature

    ESD PROTECTION

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    1.4W

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.3W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    4.7 ns

  • Power - Max

    600mW

  • FET Type

    2 P-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    142m Ω @ 2.3A, 4.5V

  • Vgs(th) (Max) @ Id

    1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    405pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    7.7nC @ 4.5V

  • Rise Time

    4.8ns

  • Drain to Source Voltage (Vdss)

    20V

  • Fall Time (Typ)

    16 ns

  • Turn-Off Delay Time

    33 ns

  • Continuous Drain Current (ID)

    2.6A

  • Threshold Voltage

    -600mV

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    -20V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    -600 mV

  • Feedback Cap-Max (Crss)

    75 pF

  • Height

    500μm

  • Length

    1.6mm

  • Width

    1.6mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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