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FDD8424H
FDD8424H
598-FDD8424H
TO-252-5, DPak (4 Leads + Tab), TO-252AD
FDD8424H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
Description
Designed specifically to reduce on-state resistance and maintain a low gate charge for the best switching performance, the FDD8424H is a 40V Dual N-channel and P-channel PowerTrench? MOSFET. The most recent medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a tiny gate charge (QG), and a small reverse recovery charge (Qrr) to enable quick switching for synchronous rectification in AC/DC power supply. It makes use of a shielded-gate design that maintains charge balance. These devices' FOM (figure of merit (QGxRDS(ON)) is 66 percent lower than that of the preceding generation because to the use of this cutting-edge technology. As a result of its ability to reduce unfavorable voltage spikes in synchronous rectification, the new PowerTrench? MOSFET can replace higher voltage rating MOSFETs or do away with snubber circuits altogether. This product is all-purpose and appropriate for a wide range of uses.
Features
N-Channel: 40V, 20A, 24mΩ
P-Channel: -40V, -20A, 54mΩ
Q1: N-Channel
Max. RDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
Max. RDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A
Q2: P-Channel
Max. RDS(on) = 54mΩ at VGS = -10V, ID = -6.5A
Max. RDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A
Fast switching speed
RoHS Compliant
Applications
Inverter
H-Bridge
Small motor control
Solar inverters
Automotive applications
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FDD8424H
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