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  • FDC6327C

FDC6327C

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Manufacturer No:

FDC6327C

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDC6327C

Package:

SOT-23-6 Thin, TSOT-23-6

Datasheet:

FDC6327C

Description:

FDC6327C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 324

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Product Details

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Product Description:

The FDC6327C is a high-performance N-channel MOSFET designed to provide efficient switching and amplification of electrical signals in various electronic applications. With its advanced design and features, this MOSFET offers reliable performance and versatility in different circuit designs.


Features:


N-Channel MOSFET: The FDC6327C is an N-channel enhancement-mode MOSFET, commonly used for high-side or low-side switching applications in electronic circuits.


Low On-Resistance: This MOSFET is characterized by its low on-resistance, which minimizes power losses and heat generation during switching, making it suitable for high-efficiency applications.


Small Signal Switching: The FDC6327C is suitable for small signal switching, amplification, and signal routing tasks in electronic circuits.


SOT-23 Package: The MOSFET is packaged in the compact SOT-23 surface-mount package, which is widely used and designed for easy integration into various circuit layouts.


RoHS Compliant: The FDC6327C adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness and safety in different applications.


Applications:


Power Management: The FDC6327C can be used in power management circuits for switching and controlling power distribution.


Voltage Regulation: In voltage regulation circuits, this MOSFET can be used for efficient power conversion and voltage control.


Motor Control: MOSFETs are often used in motor control applications for precise speed and direction control of motors.


LED Lighting: MOSFETs can be used in LED lighting applications for dimming and switching LED arrays.


Signal Amplification: The FDC6327C can be utilized for small signal amplification tasks in audio and signal processing circuits.


Switching Circuits: This MOSFET can be used in various switching circuits, such as relay drivers, analog switches, and signal routing applications.


Battery Management: In battery-powered devices, MOSFETs play a role in efficiently managing power consumption and distribution.


Load Switching: MOSFETs are commonly used as load switches to control the power supply to different components or subsystems in electronic devices.


Voltage Level Shifting: MOSFETs can also be used for voltage level shifting tasks in various circuit configurations.


In summary, the FDC6327C N-channel MOSFET offers efficient switching and signal amplification capabilities in a compact SOT-23 package. Whether you're working on power management, motor control, LED lighting, or signal amplification applications, this MOSFET provides reliable and versatile performance to enhance the efficiency and functionality of your electronic designs.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDC6327C

technical specifications, attributes, parameters and parts with similar specifications to FDC6327C.

  • Type
    Parameter
    Select All
  • Operating Temperature

    -55°C~150°C TJ

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN (SN)

  • Terminal Form

    GULL WING

  • Number of Channels

    2

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    960mW

  • Power - Max

    700mW

  • Number of Elements

    2

  • Polarity/Channel Type

    N-CHANNEL AND P-CHANNEL

  • Element Configuration

    Dual

  • Power Dissipation

    960mW

  • Threshold Voltage

    900mV

  • Continuous Drain Current (ID)

    1.9A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Turn-Off Delay Time

    14 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N and P-Channel

  • Rds On (Max) @ Id, Vgs

    80m Ω @ 2.7A, 4.5V

  • Vgs(th) (Max) @ Id

    1.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    325pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    4.5nC @ 4.5V

  • Rise Time

    14ns

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    20V

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    900 mV

  • Current - Continuous Drain (Id) @ 25°C

    2.7A 1.9A

  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2000

  • Series

    PowerTrench®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Length

    3mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Current Rating

    2.7A

  • Radiation Hardening

    No

  • Number of Pins

    6

  • Package / Case

    SOT-23-6 Thin, TSOT-23-6

  • REACH SVHC

    No SVHC

  • Height

    1.1mm

  • Width

    1.7mm

  • Resistance

    80MOhm

  • Mounting Type

    Surface Mount

  • Weight

    36mg

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