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  • FDMC8884

FDMC8884

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Manufacturer No:

FDMC8884

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMC8884

Package:

8-PowerWDFN

Datasheet:

FDMC8884

Description:

FDMC8884 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDMC8884   Description

 

  This N-channel MOSFET is produced by Fairchild's advanced power channel process, which is particularly suitable for power management and load switching applications common in notebook computers and portable battery packs.

 

FDMC8884     Application


High side in DC- DC Buck Converters

Notebook battery power management

Load switch in Notebook

 

FDMC8884      Features


Max rps(on)=19 mΩ at VGs=10 V D=9.0 A

Max rDs(on)=30mΩatVGs=4.5Vlp=7.2A

High performance technology for extremely low rps(on)

Termination is Lead-free and RoHS Compliant

 



 



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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMC8884

technical specifications, attributes, parameters and parts with similar specifications to FDMC8884.

  • Type
    Parameter
    Select All
  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • JESD-30 Code

    S-PDSO-N5

  • Number of Elements

    1

  • Power Dissipation-Max

    2.3W Ta 18W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.3W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    6 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    19m Ω @ 9A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    685pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    9A Ta 15A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    14nC @ 10V

  • Rise Time

    2ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    2 ns

  • Turn-Off Delay Time

    15 ns

  • Continuous Drain Current (ID)

    9A

  • Threshold Voltage

    1.9V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    9A

  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    40A

  • Avalanche Energy Rating (Eas)

    24 mJ

  • Nominal Vgs

    1.9 V

  • Height

    750μm

  • Length

    3.3mm

  • Width

    3.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerWDFN

  • Number of Pins

    8

  • Weight

    200mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • Series

    PowerTrench®

  • JESD-609 Code

    e4

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Resistance

    19MOhm

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Subcategory

    FET General Purpose Power

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