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FDMC86160ET100
FDMC86160ET100
598-FDMC86160ET100
8-PowerWDFN
FDMC86160ET100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDMC86160ET100 Description
Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. The on-state resistance has been optimized for this process. This device is particularly suited for small-space applications requiring ultra-low RDS(on), like high-performance VRM, POL, and orring functionalities.
FDMC86160ET100 Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC86160ET100 Applications
DC-DC Merchant Power Supply
Power Management
Consumer Electronics
Portable Devices
Industrial
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FDMC86160ET100
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