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  • FDB024N06

FDB024N06

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Manufacturer No:

FDB024N06

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDB024N06

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

FDB024N06

Description:

FDB024N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDB024N06 Description


FDB024N06 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor. Based on the advanced PowerTrench? process, MOSFET FDB024N06 is able to minimize the on-state resistance while maintaining superior switching performance. Due to its high quality and reliable performance, it is well suited for motor drives, uninterruptible power supplies, and synchronous rectification.


FDB024N06 Features


Low gate charge
Superior switching performance
Advanced PowerTrench? process
Available in the D2-PAK package
Excellent power and current handling capability


FDB024N06 Applications


Battery protection circuit
Renewable system
Motor drives
Uninterruptible power supplies
Synchronous rectification for ATX/server/telecom PSU
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDB024N06

technical specifications, attributes, parameters and parts with similar specifications to FDB024N06.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Weight

    1.762g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2013

  • Series

    PowerTrench®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    2.4MOhm

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    395W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    395W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    134 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    2.4m Ω @ 75A, 10V

  • Vgs(th) (Max) @ Id

    4.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    14885pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    120A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    226nC @ 10V

  • Rise Time

    324ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    250 ns

  • Turn-Off Delay Time

    348 ns

  • Continuous Drain Current (ID)

    265A

  • Threshold Voltage

    3.5V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Height

    4.83mm

  • Length

    10.67mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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