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BSS123LT1G

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Manufacturer No:

BSS123LT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BSS123LT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

BSS123LT1G

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6 Ω @ 100mA, 10V ±20V 20pF @ 25V TO-236-3, SC-59, SOT-23-3

Quantity:

In Stock : 999

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Product Details

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BSS123LT1G Overview


A device's maximum input capacitance is 20pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device conducts a continuous drain current (ID) of 170mA, which is the maximum continuous current transistor can conduct.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.This device reduces its overall power consumption by using drive voltage (10V).

BSS123LT1G Features


a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV

BSS123LT1G Applications


There are a lot of ON Semiconductor BSS123LT1G applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Telecom 1 Sever Power Supplies
  • Motor control
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Power Management Functions
  • Motor drives and Uninterruptible Power Supplies
  • Lighting, Server, Telecom and UPS.
  • AC-DC Power Supply
  • LCD/LED/ PDP TV Lighting
  • Synchronous Rectification
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSS123LT1G

technical specifications, attributes, parameters and parts with similar specifications to BSS123LT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2003

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    6Ohm

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    170mA

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    225mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    225mW

  • Turn On Delay Time

    20 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    6 Ω @ 100mA, 10V

  • Vgs(th) (Max) @ Id

    2.6V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    20pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    170mA Ta

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Turn-Off Delay Time

    40 ns

  • Continuous Drain Current (ID)

    170mA

  • Threshold Voltage

    800mV

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    100V

  • Nominal Vgs

    20 V

  • Height

    1.01mm

  • Length

    3.04mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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